Neutron irradiation effects in p-GaN

Polyakov, A. Y.; Smirnov, N. B.; Говорков, А. В.; Марков, А. В.; Kolin, N. G.; Merkurisov, D. I.; Boiko, V. M.; Shcherbatchev, K. D.; Бублик, В. Т.; Воронова, М. И.; Pearton, S. J.; Dabiran, A. M.; Osinsky, A.

doi:10.1116/1.2338045

Cited by 34 publications

(29 citation statements)

References 27 publications

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“…Comparison between Schottky diodes and high electron-mobility transistors suggests that the degradation in both types of devices is predominantly due to carrier removal and mobility degradation caused by radiation-induced defect centers in the crystal lattice, with interface disorder playing a relatively insignificant part in overall device degradation. [145][146][147][148][149][150][151][152][153][154][155] In summary, the main effects of radiation damage in GaN-based HEMTs can be noted as follows:…”

Section: Ecs Journal Of Solid State Science and Technology 5 (2) Q35mentioning

confidence: 99%

“…2,[136][137][138][139][140][141][142][143][144][145][146][147][148][149][150][151][152][153][154] The majority of deep electron traps in GaN are most likely dislocation-related and that probably explains the prominent role of dislocations in the trapping, gate leakage, subthreshold current leakage, and degradation in AlGaN/GaN HEMTs. The gate leakage in AlGaN/GaN HEMTs seems to be promoted by open-core screw dislocations and, in InAlN/GaN Q48…”

Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 99%

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Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

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286

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Ecs Journal Of Solid State Science and Technology 5 (2) Q35mentioning

confidence: 99%

Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

Self Cite

286

130

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“…For Mg-doped p-type GaN, the Fermi level pinning near Ec-(0.8-0.9) eV has also been reported. 115 For Fe-compensated semi-insulating GaN, both N vacancies and deep level defects were observed by DRCLS (depth-resolved cathodoluminescence spectroscopy) analysis after fast and thermal combined neutrons irradiation with fluences from 10 14 ), most of the lattice damage can be repaired under a high temperature annealing process at around 1000 C; however, a certain amount of optical and electrical damage remains. 113 In a general sense, neutron irradiation will degrade the device performance.…”

Section: à2mentioning

confidence: 99%

“…114 Neutron irradiation can also alter the resistivity or even cause type-reversion of the material. Compensation schemes have been identified for both p-type 115 and n-type 116 GaN when the neutron fluence exceeds 10 16 cm…”

Section: à2mentioning

confidence: 99%

Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by 14N(n,p)14C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

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“…[34] and for fast reactor neutrons in ref. [35]. For proton irradiation conductivity versus temperature, low frequency capacitance-voltage C-V measurements, admittance spectra measurements, photoinduced transient current PICTS [36] and current deep traps transient CDLTS [37] spectroscopy indicated that deep electron traps near E c -0.5-0.6 eV and deep hole traps with levels near E v +0.3 eV and E v +0.85 eV were introduced.…”

Section: Levels Of Radiation Defects In Ganmentioning

confidence: 99%

Radiation Damage in GaN‐Based Materials and Devices

Patrick

Law

Pearton

et al. 2014

Advanced Energy Materials

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A review of electron, proton and neutron damage in GaN and AlGaN materials and devices such as high electron mobility transistors and lightemitting diodes is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e., it can withstand radiation doses at least two orders of magnitude higher than those degrading GaAs of similar doping level. In terms of heterostructures, the initial data suggests that the radiation hardness decreases in the order AlN/GaN >AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n-and p-type GaN and interaction of radiation defects with Mg acceptors, and the poor understanding of the interaction of radiation defects in doped nitrides with the dislocations always present.

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Neutron irradiation effects in p-GaN

Cited by 34 publications

References 27 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

Review of using gallium nitride for ionizing radiation detection

Radiation Damage in GaN‐Based Materials and Devices

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