Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕GaN heterostructures

Polyakov, A. Y.; Smirnov, N. B.; Говорков, А. В.; Марков, А. В.; Pearton, S. J.; Kolin, N. G.; Merkurisov, D. I.; Boiko, V. M.

doi:10.1063/1.2006223

Cited by 51 publications

(40 citation statements)

References 34 publications

(27 reference statements)

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“…The shift of the threshold voltage to more negative values was also reported for γ-irradiated AlGaN/GaN HEMTs [78]. This positive trapped charge could also increase the 2DEG concentration and we indeed reported some increase of the 2DEG concentration in neutron irradiated AlGaN/GaN heterojunctions for low neutron fl uences [72].…”

Section: Radiation Effects In Gan Schottky Diodes In Algan/gan and Gsupporting

confidence: 55%

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Radiation Damage in GaN‐Based Materials and Devices

Patrick

Law

Pearton

et al. 2014

Advanced Energy Materials

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A review of electron, proton and neutron damage in GaN and AlGaN materials and devices such as high electron mobility transistors and lightemitting diodes is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e., it can withstand radiation doses at least two orders of magnitude higher than those degrading GaAs of similar doping level. In terms of heterostructures, the initial data suggests that the radiation hardness decreases in the order AlN/GaN >AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n-and p-type GaN and interaction of radiation defects with Mg acceptors, and the poor understanding of the interaction of radiation defects in doped nitrides with the dislocations always present.

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Section: Radiation Effects In Gan Schottky Diodes In Algan/gan and Gsupporting

confidence: 55%

“…[72]. As for proton irradiation, we observed that the decrease of the 2DEG mobility started from the neutron fl uence of 10 14 cm -2 for mobility measured at 77K and after irradiation with 10 15 cm -2 of fast neutrons for the 300K 2DEG mobility.…”

Section: Radiation Effects In Gan Schottky Diodes In Algan/gan and Gmentioning

confidence: 68%

Radiation Damage in GaN‐Based Materials and Devices

Patrick

Law

Pearton

et al. 2014

Advanced Energy Materials

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“…2,[136][137][138][139][140][141][142][143][144][145][146][147][148][149][150][151][152][153][154] The majority of deep electron traps in GaN are most likely dislocation-related and that probably explains the prominent role of dislocations in the trapping, gate leakage, subthreshold current leakage, and degradation in AlGaN/GaN HEMTs. The gate leakage in AlGaN/GaN HEMTs seems to be promoted by open-core screw dislocations and, in InAlN/GaN Q48…”

Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

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285

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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“…We know the V th is just affected by the traps in AlGaN barrier layer beneath the gate, and the transconductance is mostly affected by the 2DEG mobility (μ). Some work has also been reported that the μ should be more sensitive to neutron irradiation than the 2DEG concentration (n s ), while the annealing recovery of the μ is slower than n s [12]. So we think that the change of μ induced by neutron are crucial reason for the SiN-passivated AlGaN/GaN HEMTs, which leads to the degradation of devices characteristics.…”

mentioning

confidence: 94%

“…But much less has been done to study the effects of neutron irradiation on GaN-based material or devices. Polyakov et al [12] have reported electrical properties and DLTS in undoped n-AlGaN/GaN heterostructures. They found that the 2DEG mobility started to decrease at neutron fluences above 10 14 cm -2 , while the 2DEG concentration slightly increased at low fluences and decreased dramatically for fluences higher than 2.5×10 16 cm -2 .…”

mentioning

confidence: 98%

The effect of neutron irradiation on the AlGaN/GaN high electron mobility transistors

Yang

Duan

et al. 2010

Phys. Status Solidi (c)

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The SiN‐passivated AlGaN/GaN high electron mobility transistors were investigated by 1MeV neutron irradiation at fluences up to 1015 cm‐2, yielding a significant degradation for the transconductance near the knee voltage and the reverse gate leakage current at fluences ranging from 1014 to 1015 cm‐2 which could be attributed to the irradiation induced mobility shift and the defects in SiN passivation layers respectively since no any recovery was found after 20 hour annealing at room temperature. Meanwhile the negligible degradation of the saturation drain current, the maximal transconductance and the threshold voltage gave the fact that the effectiveness of SiN layers in passivated surface states in the source‐gate spacer and gate‐drain spacer was undiminished by neutron irradiation. Moreover the ohmic contact was robustness to neutron since the sheet resistance of ohmic contact region hardly shifted, but the schottky characteristics degraded obviously. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕GaN heterostructures

Cited by 51 publications

References 34 publications

Radiation Damage in GaN‐Based Materials and Devices

Radiation Damage in GaN‐Based Materials and Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

The effect of neutron irradiation on the AlGaN/GaN high electron mobility transistors

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