Neutron radiation damage studies of silicon detectors

Edwards, M.; Hall, G.; Sotthibandhu, S.

doi:10.1016/0168-9002(91)91044-v

Cited by 21 publications

(6 citation statements)

References 3 publications

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“…Diode leakage currents increase in linear proportion to particle fluence. After high energy hadron irradiation the volumetric current density J V increases with fluence ) as J V = D), with D Å 5-10 x 10 -17 A/cm (at 20°C); 4,5,28 the damage constant for 60 Co photons is much smaller, D Å 7x10 -23 A/cm (at 20°C). 29 Although the linear dependence is apparently trivial, it is not easy to explain.…”

Section: B Bulk Damage Effectsmentioning

confidence: 99%

“…4,5,28 The temperature dependence of the leakage current contribution from clustered V 2 defects was also calculated for N t =10 19 cm -3 . It could be fitted with the usual form Jv ~ T 2 exp(-E a /kT) with E a =0.60eV, which compares well with the measured value of 0.62±0.02eV.…”

Section: Leakage Current Density and Damage Constant For Clusteredmentioning

confidence: 99%

“…Although many changes take place during and after irradiation, for example at the surface of microstrip detectors, studies over recent years have shown that up to ~10 14 particles/cm 2 most do not cause fundamental problems. [4][5][6][7][8][9] The principal obstacle to long term operation of silicon detectors at LHC arises from bulk damage which alters the effective doping, and thus operational voltage, of the material.…”

Section: Introductionmentioning

confidence: 99%

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Bulk damage effects in irradiated silicon detectors due to clustered divacancies

Gill

Hall

MacEvoy

1997

Journal of Applied Physics

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111

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High resistivity silicon particle detectors will be used extensively in experiments at the future CERN Large Hadron Collider where the enormous particle fluences give rise to significant atomic displacement damage. A model has been developed to estimate the evolution of defect concentrations during irradiation and their electrical behaviour according to Shockley-Read-Hall (SRH) semiconductor statistics. The observed increases in leakage current and doping concentration changes can be described well after gamma irradiation but less well after fast neutron irradiation. A possible non-SRH mechanism is considered, based on the hypothesis of charge transfer between clustered divacancy defects in neutron damaged silicon detectors. This leads to a large enhancement over the SRH prediction for V 2 acceptor state occupancy and carrier generation rate which may resolve the discrepancy.

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Section: B Bulk Damage Effectsmentioning

confidence: 99%

Section: Leakage Current Density and Damage Constant For Clusteredmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Bulk damage effects in irradiated silicon detectors due to clustered divacancies

Gill

Hall

MacEvoy

1997

Journal of Applied Physics

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111

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“…Semiconductor devices are the most sensitive to the radiation induced damages produced by energetic γ-rays, electrons, neutrons and ions. An exposure of these devices to such radiations results in the creation of considerable quantity of lattice defects [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Effect of X-ray Irradiation on Electrical Characteristics Of Au/n-Bi2Te3/p-Si/Al diodes.

2016

Egyptian Journal of Solids

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The Au/n-Bi2Te3/psi/Al diode has been fabricated by using a thermal evaporation technique. The fabricated diodes were divided into two groups, the first group was as-fabricated diode, and the second group was irradiated by 6 MeV X-ray. The two groups were characterized by temperature dependent current-voltage (I-V) measurements in the range from 308 K to 373 K. The conduction mechanisms governed by the thermionic emission (TE) at lower forward voltages and the space charge-limited current (SCLC) dominated by single trap level at higher forward voltages. The junction parameters are estimated as a function of temperature. The junctions are non-ideal in showing ideality factor of 2.67 and 3.03 for as-fabricated and irradiated junctions at 308 K, respectively. The series resistances, rectification ratio and potential barrier height were also investigated.

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“…The possible damage can be essentially divided in two main areas: -gradual effects, taking place during the whole lifetime of the devices exposed to radiation [3]; -local and acute effects, due to the energy deposited by a single particle, which have a certain probability of occurrence that depends on the sensitivity of the devices [4]. Among the gradual effects, the total ionizing dose (TID) is produced by energy deposition of charged particles passing through the device.…”

Section: Introductionmentioning

confidence: 99%

Background Radiation Studies at LHCb Using Geant4

Daquino¹,

Corti

Folger

2006

IEEE Trans. Nucl. Sci.

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Abstract-This paper aims to describe the feasibility studies performed to evaluate the background radiation levels in the LHCb experiment with Geant4. LHCb is one of the experiments that will operate at the LHC (Large Hadron Collider) under construction at CERN. The simulation toolkit Geant4 has been used to model the interactions of particles with the detector. Geant4 is a software toolkit developed and maintained by a world-wide collaboration of physicists and computer scientists. The principal monitored distributions in this study are the dose and the fluence of certain particles in specific locations of the experiment. The dose is defined as the energy delivered in a volume per unit of the volume mass, while the fluence is defined as the number of particles passing through a surface per unit of area. Energy spectra need also to be evaluated to take into account the energy distribution of these particles, since specific problems in the electronics can be caused by particles of certain energies.For this purpose, we need to tally doses and fluences using Geant4.The 2D mapping of doses and fluences of charged hadrons, neutrons, gammas, electrons and positrons on planes put in specific critical areas, where the electronics is located, have been obtained.Geant4 provides different physics models to describe interaction processes allowing customization of the simulation engine to specific problems. Preliminary results using different relevant physics models are presented.

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Neutron radiation damage studies of silicon detectors

Cited by 21 publications

References 3 publications

Bulk damage effects in irradiated silicon detectors due to clustered divacancies

Bulk damage effects in irradiated silicon detectors due to clustered divacancies

Effect of X-ray Irradiation on Electrical Characteristics Of Au/n-Bi2Te3/p-Si/Al diodes.

Background Radiation Studies at LHCb Using Geant4

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