New ANSI ESD standard overcoming the deficiencies of worldwide ESD standards

Rhoades, W.T.; Maas, J.

doi:10.1109/isemc.1998.750358

Cited by 11 publications

(2 citation statements)

References 4 publications

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“…ESD generated by human body is a main interference for automotive electronics. ESD immunity test is to verify the electrostatic resistance of the automotive electronic control unit by simulating the discharge generated by the friction charged human body on the automotive electronic during storage and use in dry environment following human body mode [7,8] . The detailed ESD test conditions for flexible vehicle AMOLED are shown in Table 2 with resistance and capacitance of discharge module setting following ISO10605 [9] .…”

Section: Esd Issuementioning

confidence: 99%

47‐3: Electromagnetic Compatibility Problem Analysis of Flexible Vehicle Organic‐light Emitting Display

Dong

Xing

et al. 2022

Symp Digest of Tech Papers

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As a new vehicle display technology, flexible active‐matrix organic‐light emitting display with more complex circuit system and algorithm architecture than LCD, which is facing more challenges from electromagnetic compatibility (EMC) issues. Aiming at the actual EMC‐related problems in vehicle flexible display, here we analyzed the test method, abnormal phenomenon and principle of optical, ESD and EMC test from three aspects of interference source, interference path and terminal protection, and summarized the analysis methods and raised the improvement measures as well as the design rule for avoiding similar EMC problems.

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Section: Esd Issuementioning

confidence: 99%

47‐3: Electromagnetic Compatibility Problem Analysis of Flexible Vehicle Organic‐light Emitting Display

Dong

Xing

et al. 2022

Symp Digest of Tech Papers

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“…The small signal impedance of humans standing over a ground plane and holding a metal object varies non-linearly with frequency, from 3 kΩ at low frequency (< 1 M Hz), to less than 50 Ω at high frequency (> 1 GHz). This impedance can be modelled with discrete elements and transmission lines with good correlation to human ESD events [49]. In case of an HBM ESD event, the static charge is initially stored in the This is comparable to the pulse generated by a charged machine part touching an IC pin.…”

mentioning

confidence: 99%

An On-Chip ESD Sensor for Use in Advanced Packaging

Kannan

Vaisband

Sahoo

et al. 2022

IEEE Trans. Compon., Packag. Manufact. Technol.

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Electrostatic discharge (ESD) in integrated circuits (ICs) occurs due to charge transfer between two components in close proximity with voltage imbalance. As a result of an ESD event, a high transient current (up to few tens of Amps) and large voltage (up to several tens of kV) can develop between the two components. This fast (∼ 150 ns) transient phenomenon can cause serious damage or degrade the performance of affected ICs. ESD results in about 35% of IC field returns and is the cause of several billion dollars loss to the semiconductor industry per year. Even though most modern ICs have on-chip ESD protection circuitry embedded, static charge accumulation during transport and handling may exceed the limits of ESD protection and cause damage to the ICs. Advanced packaging schemes existing today are not amenable to rework if one or more dielets are ESD compromised. An on-chip ESD sensor would help in identifying and preventing the assembly of ESD compromised dielets in any advanced packaging schemes. In this dissertation, two approaches for on-chip ESD detection that can be employed on any die are presented: variable dielectric width capacitor, and vertical MOSCAP array. The variable dielectric width capacitor approach employs metal plates terminated with sharp corners to enhance local electric field and facilitate easy breakdown of the thin dielectric between the metal plates. The vertical MOSCAP array consists of a capacitor array connected in series. Both approaches were designed, simulated, fabricated, and experimentally characterized on GlobalFoundries 22 nm fully depleted silicon-oninsulator (FDSOI) technology. The designed vertical MOSCAP arrays were able to detect ESD events ≥ 6 V while the variable dielectric width capacitor based sensor is able to detect ESD voltii ages ≥ 40 V . A Bayesian method was formulated for the estimation of ESD voltage using the sensors and experimentally validated. Mathematical formulation for sensitivity and confidence in ESD voltage estimation was developed which matches the results of Monte-Carlo simulations. A sensitivity of 1 parts per million is achievable with 4 sensors for an ESD voltage detection of 7.4 V .The simulation study further indicates that the error in voltage estimation can be reduced from 25% to 8% by increasing the number of sensors from 1 to 8.Finally, a novel high-power delivery network for the Silicon interconnect fabric (Si-IF), a heterogeneous wafer-scale integration platform, is also proposed. The system is capable of 42 kW output power delivery to dielets when supplied with a 50-kW input power. Power delivery network (PDN) modelling and simulations have been carried out to determine impedance spectrum and I 2 R losses. A 100 W experimental prototype was designed and evaluated to check the feasibility of the proposed architecture.iii The dissertation of Kannan Kalappurakal Thankappan is approved.

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