2012 24th International Conference on Microelectronics (ICM) 2012
DOI: 10.1109/icm.2012.6471403
|View full text |Cite
|
Sign up to set email alerts
|

New approach for modeling effect of phosphorous diffusion on minority carrier lifetime in multicrystalline silicon wafers

Abstract: A model has been developed for the joint effect of multicrystalline silicon (mc-Si) wafer characteristics and diffusion parameters on minority carrier lifetime. Numerical simulations of mc-Si lifetime based on drift-diffusion model involve many simplifying assumptions, leading to non-practical results for optimizing gettering process. To overcome this deficiency, the proposed model has a completely different approach to estimate carrier lifetime enhancement for various mc-Si wafers processed under different di… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 21 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?