New ArF Photoresist Based on Modified Maleic Anhydride Cycloolefin Polymers.

Synthesis of micro-crosslinked adamantane-containing matrix resins designed for deep-UV lithography resists and their application in nanoimprint lithography

“…15,20 However, PMMA has some drawbacks, such as low sensitivity, poor dry etching resistance and poor line edge roughness (LER) in images. 17–29…”

“…15,20 However, PMMA has some drawbacks, such as low sensitivity, poor dry etching resistance and poor line edge roughness (LER) in images. [17][18][19][20][21][22][23][24][25][26][27][28][29] Accordingly, numerous studies have been devoted to improving the relevant properties of PMMA photoresists and some interesting results have been achieved. The refractive index of the resist can be improved by adding sulfur element.…”