Chemical vapor deposition (CVD) of transition-metal dichalcogenide (TMD) thin films, such as MoS 2 , on a gold (Au) surface has been regarded as one of the most promising approaches for the mass production of high-quality TMD thin films. However, the mechanism of TMD CVD growth on a gold surface remains a mystery, and many experimental observations, such as the surface chemistry during the initial stage of TMD growth and the formation of T-phase MoS 2 on a Au surface, remain unclear. In this study, we systematically explored the initial stage of MoS 2 CVD growth on a Au(111) surface by using density functional theory-based molecular dynamics simulations. Some critical steps of MoS 2 growth, such as the sulfidation of MoO 3 , the passivation of the Au(111) surface in the S-rich environment, and the lifting of Mo atoms from the Au substrate to form stable MoS 2 nuclei, have been revealed in our atomic simulations. The theoretically predicted most stable T-phase small MoS 2 clusters agree well with the previous experimental observations. Therefore, with an increase in the size of MoS 2 , a phase transition from the T phase to the H phase is essential for the growth of highly stable H-phase MoS 2 films. This study greatly deepens our understanding of the mechanism of TMD CVD growth on a Au surface and provides guidance for the controllable CVD synthesis of various TMDs.