New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop

Lophitis, Neophytos; Antoniou, Marina; Vemulapati, Umamaheswara; Arnold, Martin; Nistor, I.; Vobecký, J.; Rahimo, Munaf; Udrea, F.

doi:10.1109/led.2016.2533572

Cited by 2 publications

(1 citation statement)

References 6 publications

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“…The Bi-mode Gate Commutated Thyristor (BGCT) is an advanced type of reverse conducting IGCT (Integrated Gate Commutated Thyristor) with superior device characteristics [3], [4]. It was experimentally verified on 38 mm wafers, 4.5 kV prototypes [4], the design requirements for higher current controllability were analysed in [5] and a novel BGCT design concept that maximises the controllable current while minimises the on state losses was introduced in [6]. The top side of a recently fabricated 91mm BGCT device is shown in Figure 1.…”

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confidence: 99%

4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode

Lophitis

Antoniou

Udrea

et al. 2016

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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Publisher: IEEE © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders. This document is the author's post-print version, incorporating any revisions agreed during the peer-review process. Some differences between the published version and this version may remain and you are advised to consult the published version if you wish to cite from it. CURVE is the Institutional Repository for Coventry University

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confidence: 99%

4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode

Lophitis

Antoniou

Udrea

et al. 2016

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability

Lophitis

Antoniou

Vemulapati

et al. 2018

IEEE Electron Device Lett.

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The Bi-mode Gate Commutated Thyristor (BGCT) is an advanced reverse conducting device aiming high power applications. Due to the high degree of interdigitation of diode parts and Gate Commutated Thyristor (GCT) parts, it is necessary to investigate how to best separate the two and at the same time, how to maximise the individual power handling capability. This work underpins the latter, for the GCT part. In achieving that, this letter details the optimisation direction, identifies the design parameters that influence the Maximum Controllable Current (MCC) and thereafter introduces a new design attribute, the "pzone". This new design not only improves the MCC at high temperature, but also at low temperature, yielding temperature independent current handling capability and at least 1000 A, or 23.5 % of improvement compared to the state-of-the-art. As a result, the proposed design constitutes an enabler for optimally designed bi-mode devices rated at least 5000 A for applications with the highest power requirement.

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New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop

Cited by 2 publications

References 6 publications

4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode

4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode

Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability

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