New Carbon Architectures with Nanobounded Geometry of Voids for the High-Efficiency Capacitive and Pseudocapacitive Accumulation of Energy

Hryhorchak, I. I.; Borysyuk, A. K.; Shvets, R. Ya.; Kondyr, A. I.; Ivashchyshyn, Fedir; Balaban, O.; Kurepa, A. S.

doi:10.1007/s11003-015-9827-7

Cited by 3 publications

(1 citation statement)

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“…The CS(NH2)2C14H10 supramolecular complex insertion between the layers of the 4-fold expanded InSe matrix leads to a 6.85-fold decrease in ReZ. It should be noted that in previous studies [16,29], the thiourea and anthracene components insertion separately between the layers of InSe single crystal under similar conditions has led to the resistance increase in both cases. In our case, the insertion of the supramolecular complex CS(NH2)2C14H10 leads to an increase in the free charge carrier concentration due to the guest subsystem, which acts as an electron donor (Fig.…”

Section: -3mentioning

confidence: 69%

Electrical Conduction and Polarization Properties of InSe[CS(NH2)2[С14Н10]] Clathrate

Maksymych¹,

Calus²,

Matulka³

et al. 2022

J. Nano- Electron. Phys.

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InSeCS(NH2)2C14H10 clathrate is a 2D hierarchical structure of the subhosthostguest type obtained by the intercalation method under the influence of light. In this case, we used a layered InSe single crystal as a semiconductor 2D matrix, thiourea (CS(NH2)2) functioned as a supramolecular cavitand, and anthracene (C14H10) as a photoelectret. We used illumination during synthesis for the photoelectret polarization of anthracene. The impedance spectroscopy method was used to study the conductive and polarization properties of InSeCS(NH2)2C14H10 clathrate. As a result, the manifestation of photoinduced quantum capacitance was recorded, the nature of which is associated with the discretization of the energy spectrum and finite tunneling times. The results obtained from the study of the thermally stimulated discharge spectra show that InSeCS(NH2)2C14H10 clathrate is characterized by homo-charge relaxation and broad bands with a quasi-continuous spectrum of localized states. The behavior of the current-voltage characteristics indicates the manifestation of photocurrent with a value of + 23.5 mV.

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Section: -3mentioning

confidence: 69%