2006 21st IEEE Non-Volatile Semiconductor Memory Workshop
DOI: 10.1109/.2006.1629484
|View full text |Cite
|
Sign up to set email alerts
|

New Cell Structure with Edge-thick Tunnel Oxide for Highly Reliable NAND Flash Memory Devices

Help me understand this report

This publication either has no citations yet, or we are still processing them

Set email alert for when this publication receives citations?

See others like this or search for similar articles