New chemical approach for resist poisoning problem in via first dual-damascene process

Nakao, Hirohisa; Takei, Satoshi; Shinjo, Tetsuya; Nakajima, Yasuyuki

doi:10.1117/12.655529

Cited by 7 publications

(8 citation statements)

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“…For via first applications, dedicated BARCs (bottom antireflective coatings) have been developed that fill the iso and dense vias to almost equal levels, such that the trench photo on top can be performed with good uniformity. Moreover, amine-blocking agents can be added to the gap fill material to help minize resist poisoning from the stack [9]. Also developer-soluble gap fill materials have become available.…”

Section: Materials Related Challenges and Optionsmentioning

confidence: 99%

Lithography options and challenges for sub-45nm node interconnect layers

Maenhoudt

2008

2008 International Interconnect Technology Conference

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Section: Materials Related Challenges and Optionsmentioning

confidence: 99%

Lithography options and challenges for sub-45nm node interconnect layers

Maenhoudt

2008

2008 International Interconnect Technology Conference

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“…structure Figure 3 shows the stacked layers for the resist poisoning evaluation in the via-first DD process. 17) The stacked layers in the via structure were deposited by chemical vapor deposition with Producer SE (Applied Materials). The dielectric materials of SiO, SiOC, and SiCN were deposited using gas mixtures of SiH 4 /N 2 O, trimethylsilane (TMS)/ O 2 /He, and TMS/NH 3 /He, respectively.…”

Section: Evaluation Of Resist Poisoning Using a Simple Modelmentioning

confidence: 99%

“…However, a serious problem in the via-first DD process is resist poisoning. [17][18][19][20][21] The resist poisoning is a phenomenon in which resist patterns are not precisely formed in the trench lithography step after via formation. Top-view images of (a) the via substrate before trench pattern lithography and (b) a nonresolving trench pattern on the edge of the via substrate owing to resist poisoning are shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Resist Poisoning Studies of Gap Fill Materials for Patterning Metal Trenches in Via-First Dual Damascene Process

Takei

2008

jjap

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The via-first dual damascene process is the current manufacturing technology for copper/low-k interconnect fabrication. In the conventional via-first dual damascene process, metal trench patterning lithography is applied after filling the vias with sacrificial organic materials under the resist, such as gap fill materials and bottom antireflective coating. Resist poisoning has become a serious problem for the 65 nm technology node and beyond owing to the use of porous low-k dielectric materials. This study describes the newest method of evaluating resist poisoning. The dependence of film thickness on resist poisoning was observed, and the effects of the gap fill materials with different polymers were also clarified. One gap fill material was found to have an excellent resist poisoning blocking property as determined from the bias of trench patterning size between the center and edge areas. In addition, to evaluate the resist poisoning in lithography, a chemical approach using the developed gap fill materials can potentially allow the skipping of the additional thermal annealing process and achieve high throughput wafer processing by only coating the gap fill material on the substrates that generate resist poisoning. Continuing the via-first dual damascene process using porous low-k dielectric materials in an advanced lithography will be valuable in future studies based on this evaluation method, compared with the trench-first dual damascene process owing to the higher cost of the latter.

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“…To meet the increasing demand of high degrees of integration in semiconductor devices, gap fill materials with high planarization and fast etch rates are required by the microelectronics industry in the 130 nm node and below for dual damascene technologies. [1][2][3][4][5][6][7][8][9][10][11] In the via-first dual damascene process of ArF photolithography, gap fill materials are used as sacrificial materials under a photoresist or bottom antireflective coating (BARC). The gap fill materials described herein are fillers or planarizing materials designed to planarize the irregularities of the substrate.…”

Section: Introductionmentioning

confidence: 99%

Gap Fill Materials Using Cyclodextrin Derivatives in ArF Lithography

Takei

Shinjo

Sakaida

et al. 2007

jjap

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We determine the geometry of supersymmetric heterotic string backgrounds for which all parallel spinors with respect to the connection∇ with torsion H, the NS⊗NS three-form field strength, are Killing. We find that there are two classes of such backgrounds, the null and the timelike. The Killing spinors of the null backgrounds have stability subgroups K R 8 in Spin(9, 1), for K = Spin(7), SU (4), Sp(2), SU (2) × SU (2) and {1}, and the Killing spinors of the timelike backgrounds have stability subgroups G 2 , SU (3), SU (2) and {1}. The former admit a single null∇-parallel vector field while the latter admit a timelike and two, three, five and nine spacelike∇-parallel vector fields, respectively. The spacetime of the null backgrounds is a Lorentzian two-parameter family of Riemannian manifolds B with skew-symmetric torsion. If the rotation of the null vector field vanishes, the holonomy of the connection with torsion of B is contained in K. The spacetime of time-like backgrounds is a principal bundle P with fibre a Lorentzian Lie group and base space a suitable Riemannian manifold with skew-symmetric torsion. The principal bundle is equipped with a connection λ which determines the non-horizontal part of the spacetime metric and of H. The curvature of λ takes values in an appropriate Lie algebra constructed from that of K. In addition dH has only horizontal components and contains the Pontrjagin class of P . We have computed in all cases the Killing spinor bilinears, expressed the fluxes in terms of the geometry and determine the field equations that are implied by the Killing spinor equations.

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New chemical approach for resist poisoning problem in via first dual-damascene process

Cited by 7 publications

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Lithography options and challenges for sub-45nm node interconnect layers

Lithography options and challenges for sub-45nm node interconnect layers

Resist Poisoning Studies of Gap Fill Materials for Patterning Metal Trenches in Via-First Dual Damascene Process

Gap Fill Materials Using Cyclodextrin Derivatives in ArF Lithography

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