New CMOS triode transconductor

Lee, S.O.; Park, S.B.; Lee, K.R.

doi:10.1049/el:19940668

Cited by 15 publications

(8 citation statements)

References 1 publication

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“…In order to cancel the non-linearity associated to V DS2 , in many topologies the drain-source voltage V DS is kept constant, and the input voltage is applied to the gates in a fully differential topology. The resulting transconductance can be tuned by this constant V DS voltage [4][5][6][7][8][9][10]. The drain-source voltage is often set by feedback structures [4], requiring an increase in the area and the power consumption of the circuit.…”

Section: Introductionmentioning

confidence: 99%

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A novel CMOS triode transconductor based on current division

Algueta-Miguel

Blas

López-Martín

2011

Analog Integr Circ Sig Process

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A compact transconductor based on transistors operating in the triode region is presented. A novel V-I conversion stage made up of current dividers is proposed. The circuit allows tunability by adjusting a dc current and the transconductance is independent of transconductance parameter of the triode transistors. Besides, the circuit is simple because feedback structures to fix source-drain voltages of triode transistors are not needed, saving area and featuring low power consumption. Measurement and simulation results are presented and analyzed for validating the proposed technique.

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Section: Introductionmentioning

confidence: 99%

“…The drain-source voltage is often set by feedback structures [4], requiring an increase in the area and the power consumption of the circuit. In [8] a different design strategy is proposed. It is based on current division between two transistors in triode region, which share the source terminal.…”

Section: Introductionmentioning

confidence: 99%

A novel CMOS triode transconductor based on current division

Algueta-Miguel

Blas

López-Martín

2011

Analog Integr Circ Sig Process

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“…Since conventional structure of regulated cascode (RGC) with NMOS [6] or PMOS [7] can not operate at lower supply voltage, a triode transconductor design is proposed by replacing the auxiliary amplifier in Fig. 1 with a two stage amplifier.…”

Section: The Proposed Transconductormentioning

confidence: 99%

“…Several circuit design techniques to improve linearity of transconductors have been reported in literatures. The linearization methods include: source degeneration using resistors or MOS transistors, crossing-coupling of multiple differential pairs, class-AB configuration, adaptive biasing, and constant drain-source voltages [1,2,3,4,5,6].…”

Section: Introductionmentioning

confidence: 99%

A low voltage, high linear, and tunable triode transconductor

Kuo

2009

IEICE Electron. Express

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A low voltage, highly linear, and tunable triode transconductor is presented. The proposed transconductor uses a two-stage amplifier to regulate drain-source voltage of input devices. Thereby, high linearity can be achieved. The proposed design is able to operate at low supply voltage. The linear input range can be obtained up to 1.5 V at 1.8 V supply voltage. The simulated total harmonic distortion is −61 dB with 0.7 V pp input signal. The design uses TSMC 0.18 μm CMOS technology and supply voltage is 1.8 V. Simulation result shows that the tuning range of the proposed transconductor can be ranged from 220 μA/V to 869 μA/V. Keywords: linear, tunable, low power, transconductor Classification: Integrated circuits References[1] S. Sengupta, "Adaptively biased linear transconductor," IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 52, no. 11, pp. 2369-2375, Nov. 2005 [2] Y. Kim, J. Park, M. Park, and H. Yu, "A 1.8 V triode-type transconductor and its application to a 10 MHz 3 rd -order chebyshev low pass filter," IEEE Custom

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“…Due to the large area penalty of using passive resistors, wide spread, lack of accuracy and programmability [1,2], a large number of implementations of active resistors and transconductors using MOS transistors have been discussed in literature [3 -11]. Some of these techniques exploit the MOS transistor characteristic in the triode [2,12,13], saturation regions [2] and few exploit the subthreshold region of operation [14,15]. The new topology can be used to obtain low-power high-value floating resistors with high linearity and wide dynamic range.…”

Section: Introductionmentioning

confidence: 99%

A novel topology for grounded-to-floating resistor conversion in CMOS technology

Al-Sarawi

2002

Microelectronics Journal

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A new circuit topology to convert grounded resistors to an equivalent floating resistor is presented and discussed. The value of the resulting floating resistor equals the sum of the two grounded resistors. The new topology can be used to convert either passive, active grounded resistors or active grounded conductances. The new topology is used in the design of a current controlled very high value floating resistor in the range of GV. This was achieved by utilising the output conductance of two matched transistors operating in the subthreshold region and biased using a 500 nA current. The practicality of the new topology is demonstrated through the design of a very low frequency bandpass filter for artificial insect vision and pacemaker applications. Simulations results using Level 49 model parameters in HSPICE show an introduced total harmonic distortion of less than 0.25% for a 1 V pp input signal in a 3.3 V 0.25 mm CMOS technology. Statistical modelling of the new topology is also presented and discussed. q

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New CMOS triode transconductor

Cited by 15 publications

References 1 publication

A novel CMOS triode transconductor based on current division

A novel CMOS triode transconductor based on current division

A low voltage, high linear, and tunable triode transconductor

A novel topology for grounded-to-floating resistor conversion in CMOS technology

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