New compact power cells for Ku band applications

Déchansiaud, Adeline; Sommet, Raphaël; Reveyrand, Tibault; Quéré, Raymond; Chang, Christophe; Bouw, Diane; Camiade, M.; Deborgies, F.

doi:10.1109/inmmic.2011.5773317

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2013

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“…In order not to overdrive the gate, a capacitive voltage divider, consisting of the parasitic gatesource capacitance and a series capacitor, is used. The division ratio is set in such a way that equal voltage and power splitting is achieved [6]- [8]. This approach would require very large voltage swings (full drain voltage swing) due to the series capacitor for the signal input of the upper transistor when being in normal PA operation (switch closed).…”

Section: Circuit Implementationmentioning

confidence: 99%

An integrated switchable cascode RF power amplifier in GaN technology

Seebacher

Bösch

Singerl

et al. 2013

IEEE MTT-S International Microwave and RF Conference

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In this paper an integrated switchable cascode RF power amplifier (PA) will be presented. Modern communication standards use coding schemes with high peak to average power ratios (PAPR) therefore PA efficiency in back off is key to efficient transmitters. The proposed switchable cascode PA, which is based on a modified cascode structure, is capable of providing such an efficiency peak in back off. The operational principle is explained and a possible circuit implementation in GaN technology at 2.65 GHz is presented. At a maximum power of 2.74 W the circuit has a power added efficiency (PAE) of 65.4 % and at 0.57 W (6.7 dB backoff) a PAE of 60.2 %. In addition the combination with other efficiency enhancement methods such as baseband PWM or direct filter connection are covered.

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Section: Circuit Implementationmentioning

confidence: 99%