New concept of planar germanium MOSFET with stacked germanide layers at source/drain

Abstract

Novel Schottky barrier Ge-based MOSFET structure is proposed and simulated. The Source/Drain region is consisted with two stacked layers of germanide materials. The barrier heights of the top and bottom layer are different. The working mechanism and performance of the device is studied. The results show that ON-state current, leakage current, and transfer characteristics have been enhanced with the proposed structure. Besides, the requirement of GOI structures for leakage immunization can be released.

Performance Analyses of Planar Schottky Barrier MOSFETs with Dual Silicide Layers at Source/Drain on Bulk Substrates and Material Studies of ErSix/CoSi2/Si Stack Interface*

“…Previously, we proposed the dual barrier SB-MOSFETs (DBFETs) on silicon-on-insulator (SOI) substrates for the planar cases, [14] also discussed on their possible applications in Ge-based devices. [15] In this Letter, we expand the application of DBFETs on bulk substrates, which plays an important role for heating radiation. The working mechanisms and electrical properties of DBFETs on bulk substrates are focused firstly, the impact factors of physical parameters on performance are analyzed in detail.…”