New concepts in infrared photodetector designs

Martyniuk, Piotr; Antoszewski, J.; Martyniuk, Mariusz; Faraone, Lorenzo; Rogalski, Antoni

doi:10.1063/1.4896193

Cited by 236 publications

(138 citation statements)

References 112 publications

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“…Electrons are transferred to the next stage through an interband tunneling process. The cascading scheme helps to overcome the strong coupling between responsivity and diffusion length which plays a major role especially at high temperature operation [2]. In a bulk material the diffusion length is typically shorter than the absorption depth which has a strong impact on the absorption efficiency.…”

Section: Introductionmentioning

confidence: 99%

Innovative mid-infrared detector concepts

et al. 2016

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Gas sensing is a key technology with applications in various industrial, medical and environmental areas. Optical detection mechanisms allow for a highly selective, contactless and fast detection. For this purpose, rotational-vibrational absorption bands within the mid infrared (MIR) spectral region are exploited and probed with appropriate light sources. During the past years, the development of novel laser concepts such as interband cascade lasers (ICLs) and quantum cascade lasers (QCLs) has driven a continuous optimization of MIR laser sources. On the other hand side, there has been relatively little progress on detectors in this wavelength range. Here, we study two novel and promising GaSb-based detector concepts: Interband cascade detectors (ICD) and resonant tunneling diode (RTD) photodetectors. ICDs are a promising approach towards highly sensitive room temperature detection of MIR radiation. They make use of the cascading scheme that is enabled by the broken gap alignment of the two binaries GaSb and InAs. The interband transition in GaSb/InAs-superlattices (SL) allows for normal incidence detection. The cut-off wavelength, which determines the low energy detection limit, can be engineered via the SL period. RTD photodetectors act as low noise and high speed amplifiers of small optically generated electrical signals. In contrast to avalanche photodiodes, where the gain originates from multiplication due to impact ionization, in RTD photodetectors a large tunneling current is modulated via Coulomb interaction by the presence of photogenerated minority charge carriers. For both detector concepts, first devices operational at room temperature have been realized.

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Section: Introductionmentioning

confidence: 99%

Innovative mid-infrared detector concepts

et al. 2016

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“…All types of MCT−based photodetec− tors use some kind of n−type material, including photocon− ductors, photodiodes, and most recently, nBn detectors [1]. In fact, the advent of the nBn architecture, which allows for circumventing the difficulties with p−type doping of MCT [2], makes the technology of n−type material increasingly important. N−type MCT can be fabricated using donor dop− ing with, e.g., indium or iodine.…”

Section: Introductionmentioning

confidence: 99%

Background donor concentration in HgCdTe

Іжнін

Mynbaev

Voitsekhovsky

et al. 2015

Opto-Electronics Review

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“…[1][2][3] The SL material with the best structural quality is grown on GaSb substrates where lattice mismatch induced dislocations are at a minimum. Infrared transparent substrates are preferred for detector applications because the sensor is usually mounted upside down to facilitate contacting of the sensor to read-out electronics by bump bonding so the light must come through the substrate before being absorbed in the sensor.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

et al. 2015

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Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overall mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers. C

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New concepts in infrared photodetector designs

Cited by 236 publications

References 112 publications

Innovative mid-infrared detector concepts

Innovative mid-infrared detector concepts

Background donor concentration in HgCdTe

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

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