New configuration of high-power inverter drives

Theoretical Study on the Biaxial Tensile Properties of Plain Tricot Fabric

“…Accordingly, needle loop in this initial state, as well as in the critical stretch state, is symmetrical to the central line in warp direction. In this region, it seems that yarn is elastic and not elongated, and that the arc of each loop is stretched as a built-in beam during deformation [8].…”

“…Then, the biaxial deformation mode is defined by the ratio of strains in two directions. [8] 2-1 Critical Tensile Ratios Aci and Ace If the yarn is completely flexible, not stretched and moves without friction in entire crossover region, then the unit structure during deformation will reach one state where the looseness of the yarn is lost. This imaginary state is called "a critical tensile state".…”

“…That is, the biaxial tensile properties of the plain tricot fabric are calculated theoretically from the structure of the fabric and the mechanical properties of yarn (i.e., tensile and frictional properties) applying the method developed by Kawabata [8]. The tensile properties in the two regions, i.e., the bending effective region and the stretching effective region, are separately analyzed by using a new model which is different in structure from single dembigh stitch.…”

Study on Pile Fabrics

“…The first factor there contains energy loss ratio (5), compressive resilience (6), compressive ratio (7), compressive modulus (8), fatigue ratio (9), compressive index (10), compressive recovery ratio (11) and pile ratio (13). Therefore the first factor is related with compressive recovery and elasticity of pile fabrics.…”

Advanced Cascade Multilevel Converter with Reduction in Number of Components

“…The first introduced topology was the series H-bridge design [6], but several configurations have been obtained for this topology as well [7][8]. Several combinational designs have also been developed by cascading the fundamental topologies [9][10]. These designs can improve power quality for a given number of semiconductor devices than the fundamental topologies alone due to a multiplying effect of the number of levels.…”