New cubic Cd1−xMnxS epilayers grown on GaAs (100) substrates by hot-wall epitaxy

Abstract

The new cubic Cd1−xMnxS/GaAs(100) epilayers were grown by hot-wall epitaxy, and their structural and optical properties were investigated by x-ray diffraction (XRD) and photoluminescence (PL). The cubic structure spectra of the Cd1−xMnxS epilayers were only observed in the Mn composition range of 0.000≤x≤0.050 from the XRD spectra and the x-ray ϕ-scan curves. The lattice constants of the Cd1−xMnxS epilayers decreased linearly with increasing Mn composition and were consistent with Vegard’s law. The Cd1−xMnxS epilayers from x-ray reciprocal space mapping were found to be in a partially biaxial compressive strain state. In the cubic Cd1−xMnxS epilayers, only yellow emission PL peaks at around 2.0 eV without other peaks such as the appreciable near-edge emission peak and self-activated peak were observed.

Raman spectroscopy of very small Cd1−xCoxS quantum dots grown by a novel protocol: direct observation of acoustic‐optical phonon coupling

“…In diluted magnetic semiconductor (DMS) QDs, the unique physical properties are dependent upon the sp‐d exchange interaction and have attracted considerable attention in the last few years, aiming possible technological applications such as in solar cells, wavelength tunable lasers, or in spintronic devices . Thus, different synthesis routes for II–VI‐based DMS nanostructures, as for instance colloidal chemistry, hot wall epitaxy, and chemical bath deposition among others, have been developed in an attempt to provide full control of their optical properties. However, stable and transparent materials should be used as host templates for the growth of doped nanostructures to target several technological applications, which may require them to work on a wide range of temperatures.…”

Elastic-relaxation-induced barrier layer thickness undulations in InP/GaAs type-II quantum well superlattice structures

“…It is also observed that the deviation of the S 0 peak from the vertical line for the samples SL6 and SL7 is very small indicating an onset of the relaxation process leading to very small relaxation values for these samples, while it is relatively large for the sample SL8, confirming a clear relaxation of the grown superlattice structure. The procedure of the determination of relaxation from the RSM plot has been very well described in the literature [21,22]. First, a parallel mismatch ( || ) and a perpendicular mismatch ( ⊥ ) are determined from the RSM plot and then the relaxation is defined as the ratio of the parallel mismatch to the bulk mismatch.…”