New design method of uniform and nonuniform distributed power amplifiers

Duperrier, Cédric; Campovecchio, Michel; Roussel, L.; Lajugie, M.; Quéré, Raymond

doi:10.1109/22.971641

Cited by 103 publications

(35 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A NiCr resistor is placed in parallel with each gate capacitor to provide a DC path for the gate bias. A detailed discussion on the design of distributed amplifiers can be found in [4]. The challenge of this work is to find the optimum G 0,i for large-signal drive conditions over bandwidth, especially at the upper band edge.…”

Section: Circuit Design and Small-signal Resultsmentioning

confidence: 99%

8–42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology

Dennler

Schwantuschke

Quay

et al. 2012

2012 IEEE/MTT-S International Microwave Symposium Digest

View full text Add to dashboard Cite

This paper reports on two wide bandwidth monolithic power amplifiers suitable for electronic warfare (EW) systems and other wide bandwidth applications up to the Qband. The MMICs are based on a 100 nm AlGaN/GaN T-gate HEMT microstrip transmission line MMIC technology with an fT > 80 GHz. Both designed and fabricated amplifiers use the non-uniform distributed power amplifier (NDPA) topology and cover a frequency range from 8 GHz to 42 GHz, whereas the lower band edge is limited by the on-chip DC bias network. The first MMIC is a single-stage topology with a measured S21 of 6 ± 1 dB, the second a dual-stage topology with a measured S21 of 14 ± 2 dB, both over the entire frequency range. By choosing adequate device geometries and a low interstage impedance of 32 Ω in the dual-stage design, the wide bandwidth and high saturated output power of > 0.5 W of the single-stage design are maintained. A large-signal state-space model was used in the design process. A large-signal methodology for the broadband design of the amplifiers given soft compression of the FETs and low PAE over large bandwidth is proposed and verified.

show abstract

Section: Circuit Design and Small-signal Resultsmentioning

confidence: 99%

8–42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology

Dennler

Schwantuschke

Quay

et al. 2012

2012 IEEE/MTT-S International Microwave Symposium Digest

View full text Add to dashboard Cite

show abstract

“…l g 1 l g 2 l g 3 l g 4 Non-uniform structures [7] do not require this dummy resistor, but this comes at the cost of sacrificing bandwidth or gain flatness. In the case of power amplifiers, gain flatness is less critical.…”

Section: Rtuif-18mentioning

confidence: 99%

A non-uniform GaN power TWA for 2 to 10 GHz suitable for square-wave operation

Meliani

Ersoy

Chaturvedi

et al. 2009

2009 IEEE Radio Frequency Integrated Circuits Symposium

View full text Add to dashboard Cite

A broadband GaN monolithic power amplifier covering the 2 to 10 GHz band is presented. It is based on a nonuniform traveling-wave architecture using 4 transistor cells with 4x125 µ µ µ µm gate width each. The amplifier achieves 7 to 11 dB small signal gain in the frequency band between 2 and 10 GHz. The circuit delivers between 2.5 and 4.5 W over the bandwidth from 2 GHz up to 10 GHz. At maximum output power a PAE higher than 20% is achieved. In addition, large signal operation with square wave signals have been demonstrated at 1 and 2 Gbps, with 5 W output power at 1 Gbps.

show abstract

“…A conventional DPA, called as a non-uniform DPA (NDPA), is designed using non-uniform drain lines, non-uniform transistor size or both to improve an output power and a power-added efficiency (PAE) [3,4]. The schematic circuit diagram of the DPA is shown in Fig.…”

Section: Distributed Power Amplifier Designmentioning

confidence: 99%

A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology

Shin

Yom

Kim

2017

J Electromagn Eng Sci

View full text Add to dashboard Cite

This study presents a 2-20 GHz monolithic distributed power amplifier (DPA) using a 0.25 μm AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a nonuniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC) are 35.3-38.6 dBm and 11.4%-31%, respectively, for 2-20 GHz. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

show abstract

New design method of uniform and nonuniform distributed power amplifiers

Cited by 103 publications

References 12 publications

8–42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology

8–42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology

A non-uniform GaN power TWA for 2 to 10 GHz suitable for square-wave operation

A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology

Contact Info

Product

Resources

About