2009
DOI: 10.1631/jzus.a0820262
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New design of sense amplifier for EEPROM memory

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Cited by 3 publications
(3 citation statements)
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“…Simulations are done to evaluate the circuit performance of the modified SA with the previously reported voltage type SA [12]. The transistors involved in the sensing circuitry were of equal size W/L = 0.18µ/0.18µ.…”
Section: Resultsmentioning
confidence: 99%
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“…Simulations are done to evaluate the circuit performance of the modified SA with the previously reported voltage type SA [12]. The transistors involved in the sensing circuitry were of equal size W/L = 0.18µ/0.18µ.…”
Section: Resultsmentioning
confidence: 99%
“…The proposed low voltage-type SA is designed in CEDEC 0.18 − µm CMOS process. Simulations results show that the modified low voltage-type SA performs better than the SA designed by Liu et al [12].…”
Section: Introductionmentioning
confidence: 81%
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