New developments in the characterization of dislocation loops from LACBED patterns

Abstract

Summary The characterization of the Burgers vector of dislocations from large‐angle convergent‐beam electron diffraction (LACBED) patterns is now a well‐established method. The method has already been applied to relatively large and isolated dislocation loops in semiconductors. Nevertheless, some severe experimental difficulties are encountered with small dislocation loops. By using a 2 µm selected‐area aperture and a carbon contamination point to mark the loop of interest, we were able to characterize both the plane and the Burgers vector of dislocation loops of a few tens of nanometres in size present in Al‐Cu‐Mg alloys.

Dislocation Analysis in SiGe Heterostructures by Large-Angle Convergent Beam Electron Diffraction

“…Morniroli et al [78,80] also discuss in detail how small dislocation loops can be investigated with LACBED. Analysis of dislocation loops in semiconductors larger than 100 nm can be done similar to straight dislocations [66,81], because one has the freedom to choose the size of the shadow image by the defocus parameter h. However, for small dislocation loops with less than 100 nm extension, optimized conditions are needed.…”

Defocus convergent beam electron diffraction analysis of dislocations in mullite

“…CBED has, in recent years, emerged as a useful tool for the characterization of lattice defects (Carpenter & Spence, 1982; Cherns & Preston, 1986, 1989; Tanaka et al , 1988; Chou et al , 1992; Cherns & Morniroli, 1994; Ponce et al , 1996; Morniroli, 2002, 2006; Morniroli et al , 2006a, b). The Burgers vector of a dislocation may be determined from large‐angle convergent beam electron diffraction (LACBED) patterns (Cherns & Preston, 1986, 1989; Tanaka et al , 1988; Chou et al , 1992; Morniroli, 2002).…”