New dynamic model for multimode chirp in DFB semiconductor lasers

Lowery, Arthur J.

doi:10.1049/ip-j.1990.0049

Cited by 30 publications

(8 citation statements)

References 35 publications

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“…The pulse width is taken as 0.5 ns, corresponding to a 2 Gbps input. The frequency chirp is evaluated, by taking the Fourier transform of the optical output pulse at two different temperatures, 20 and 50 • C. The chirp behavior is similar to the observation of Lowery (1990), and verifies our procedure. The result also shows a reduction of chirp by a factor of 2 at higher temperature.…”

Section: Simulation Results and Analysissupporting

confidence: 72%

“…The theory of Transmission Line Modeling of laser diodes has been well established (Lowery 1987(Lowery , 1989(Lowery , 1990Lowery and Hewitt 1992). Hence, we provide a brief overview of the procedure and equations required to implement the thermal dependence.…”

Section: Modelingmentioning

confidence: 99%

“…Further, inclusion of package parasitics and drive circuit interactions are possible due to microwave circuit nature of the model. It is well established that transmission line model can be used to model single mode lasers like DFB laser diodes and external cavity lasers with all physical processes included (Lowery 1989(Lowery , 1990Lowery and Hewitt 1992).…”

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confidence: 99%

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An improved transmission line laser model for multimode laser diodes incorporating thermal effects

Madhan

Neelakandan

2008

Opt Quant Electron

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An improved transmission line model to study the thermal effects in semiconductor laser diodes is reported in this paper. The temperature effects in the laser characteristics are obtained by incorporating temperature dependent gain and carrier density equations for the laser cavity. These primary factors are introduced in the regular transmission line laser model to estimate the static and dynamic characteristics of an 1.3 µm InGaAsP double heterostructure laser diode. The results show good agreement with the experimental observation and solution of rate equations referred in the literature. The key feature of this model is that it provides the laser spectra at various temperatures. Based on the model, time dependent evolution of optical spectrum, temperature dependent optical output and frequency chirp are evaluated. Further the distribution of photon and electron density within the cavity is also determined.

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Section: Simulation Results and Analysissupporting

confidence: 72%

Section: Modelingmentioning

confidence: 99%

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An improved transmission line laser model for multimode laser diodes incorporating thermal effects

Madhan

Neelakandan

2008

Opt Quant Electron

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“…VPI is based on transmission-line laser model [28], where multiple longitudinal modes, carrier transport effects, carrier induced refractive index change, carrier induced material gain spectrum change and spontaneous emission noise are all taken into consideration [29][30][31].…”

Section: Simulation Resultsmentioning

confidence: 99%

Transient mode competition in directly modulated DFB semiconductor laser

Xiao

Shi

Zheng

et al. 2015

Sci. China Phys. Mech. Astron.

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A new effect of transient mode competition in directly modulated DFB laser based on equivalent phase-shift (EPS) technique is presented and studied. Since there are multi-order reflections in EPS structure and if the 0th order subgrating is properly designed, the transient lasing of 0th order will occur during the rising time of the injection current. As a result, transient mode competition between 1st order (main mode) and 0th order will occur accordingly. This can consume redundant carrier and suppress the transient relaxation oscillation, which may be applied in some areas like on-off switching modulation of DFB semiconductor lasers. As an example, an equivalent  phase shift (-EPS) is carefully designed to realize the effect. In such a laser the 0th order wavelength is in the margin of the material gain region and the 1st order wavelength is around the gain peak, while the stable single longitudinal mode (SLM) operation of the 1st order is guaranteed. The simulation investigation is performed. Good results with suppressed relaxation oscillation and 1.25 Gb/s directly on-off modulation (32 dB extinction ratio) are demonstrated. We believe it provides a new kind of method for on-off switching with high extinction ratio and weak relaxation oscillation. DFB semiconductor laser, mode competition, relaxation oscillation, sampled grating PACS number(s): 42.55.Px, 42.60.Mi, 42.60.Rn Citation: Xiao R L, Shi Y C, Zheng J L, et al. Transient mode competition in directly modulated DFB semiconductor laser.

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“…The scattering matrix S describes the propagation procedures of the traveling waves in each section (from the input port to the output port), which may be expressed as [13]:…”

Section: Scattering Matrixmentioning

confidence: 99%