Zinc oxide (ZnO) has been widely used in inverted organic
solar
cells (I-OSCs) as the electron transport layer (ETL) due to its excellent
electrical properties. However, the high-temperature process (>300
°C) applied to the ZnO ETL to enhance its electrical properties
has been regarded as the bottleneck for application of this ETL to
flexible I-OSCs due to the limited temperature tolerance of flexible
substrates. In this work, we synthesized aluminum (Al)-doped ZnO with
a sol–gel process (AZO) and successfully demonstrated highly
efficient flexible I-OSCs with a low-temperature-processed (140 °C)
AZO ETL (AZO 140 °C). Since Al doping of ZnO results in an enhanced
electrical conductivity and reduced defects in ZnO even for low-temperature-treated
materials, the rigid and flexible I-OSCs with AZO 140 °C ETLs
exhibit power conversion efficiencies (PCEs) of 16.3 and 14.4%, respectively,
which are higher than those of I-OSCs with low-temperature-processed
(140 °C) ZnO ETLs. Furthermore, the unencapsulated I-OSC with
the AZO ETL exhibits improved storage stability (T
80 > 5000 h) compared to that with the ZnO ETL (T
80 = 100 h), and an excellent thickness-insensitive
PCE is also obtained for the I-OSCs with various thicknesses of the
AZO ETL (22–190 nm). These results provide meaningful insight
into reducing the process temperature of an ETL toward high-performance,
flexible electronic systems.