New fast chemically assisted ion beam etching (CAIBE) technique for preparation of TEM specimen from silicon

Fauré, J.; Bonhomme, Pierre; Balossier, G.

doi:10.1051/mmm:019910020108900

Cited by 4 publications

References 10 publications

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High-dose phenomena in zinc-implanted silicon crystals

Simov

Kalitzova

Karpuzov

et al. 1996

Journal of Applied Physics

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The structure of (100) silicon implanted with Zn+ ions at an energy of 50 keV was studied. The ion doses were varied from 1×1015 to 1×1017 cm−2 and the beam current density was 10 μA cm−2. The analytical techniques employed for sample characterization included cross-sectional transmission electron microscopy and x-ray energy dispersion analysis. The energy deposition of the ion beam was calculated by using computer simulation codes. For the two lower doses of 1×1015 and 1×1016 a crystalline-to-amorphous transformation was observed in the implanted layer and this was correlated with the thermal history of the implants and the attendant changes in morphology. In contrast, an amorphous-to-crystalline transition was found to occur at higher doses, namely 5×1016 and 1×1017, where the formation of a complex, structured layer consisting of an amorphous phase mixed with crystalline grains of Zn and partly recrystallized Si was identified together with other specific structural features. Detailed characterization of the resulting microstructures was carried out taking into account the effects of sample heating, ion-beam-induced amorphization, crystallization, and sputtering.

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High-dose phenomena in zinc-implanted silicon crystals

Simov

Kalitzova

Karpuzov

et al. 1996

Journal of Applied Physics

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Amorphization and crystallization in high-dose Zn+-implanted silicon

Kalitzova

Simov

Yankov

et al. 1997

Journal of Applied Physics

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The nature of amorphization and crystallization of Si brought about by 50 keV Zn ion implantation within the dose range 2×1017–1×1018 cm−2 is studied. The structures are evaluated in the as-implanted state by transmission electron microscopy, transmission electron diffraction, reflection high-energy electron diffraction, selected-area electron diffraction, x-ray energy-dispersive analysis, and Rutherford backscattering spectrometry. It is found that, contrary to the theoretical predictions, the Zn concentration profile does not reach saturation even at a dose as high as 1×1018 cm−2. A common feature of the microstructure of these high-dose implants is the formation of a continuous amorphous layer and concurrent crystallization of Zn and Si in small crystalline clusters. Microscopic beam-heating effects are also believed to play an appreciable role in the development of the specific morphologies observed. The results are interpreted in terms of two recent models proposed in the literature and the concept of critical dose ranges.

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Effects of high dose Pb/sup +/ implantation on Si: atomic force and transmission electron microscopy study

Angelov

Groudev²

IVMC 2001. Proceedings of the 14th International Vacuum Microelectronics Conference (Cat. No.01TH8586)

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We investigated the influence of ion dose on the microstructure of Pb' -implanted (1 00) monocrystalline Si at room temperature. Surface layer amorphization is observed by Cross Sectional Transmission Electron Microscopy (XTEM) at dose 1x1 Ol5cm-'. At doses > 1~1 0 '~c m~' a competitive process of ion beam induced crystallisation (IBIC) in the amorphized (a)-layer is established. The evolution of surface roughness (estimated by Atomic Force Microscopy (AFM)), as a function of implantation dose reflects the process of microcrystals formation in the surface a-layer. High Resolution Transmission Electron Microscopy (HRTEM), combined with Rutherford Backscattering Spectroscopy (RBS) and computer simulations have been also used. It has been established that the front of new phase crystallization (cubic Pb) starts at positions, corresponding to the peaks in the Pb' implant profiles. By computer processing of the HRTEM image of the nanocrystal so formed , the theoretical model for recrystallization by precipitation in liquid phase of elements with low melting temperature has been confirmed experimentally.

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New fast chemically assisted ion beam etching (CAIBE) technique for preparation of TEM specimen from silicon

Cited by 4 publications

References 10 publications

High-dose phenomena in zinc-implanted silicon crystals

High-dose phenomena in zinc-implanted silicon crystals

Amorphization and crystallization in high-dose Zn+-implanted silicon

Effects of high dose Pb/sup +/ implantation on Si: atomic force and transmission electron microscopy study

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