MRS Proc.
 1989
DOI: 10.1557/proc-147-309
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New Features of Dark and Photoconductivity Response of Low Energy Ar+ Ion bombarded GaAs

Ashok Vaseashta
1
,
L. C. Burton
2

Abstract: Photoconductivity measurements have been made on three SI GaAs sample types: Ar+ ion etched at leV, 3keV, and unetched. Measurements were made versus time, wavelength, and temperature.

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