New Findings on Multilayer Silicene on Si(111)√3×√3R30°–Ag Template

Padova, Paola De; Generosi, Amanda; Paci, Barbara; Ottaviani, Carlo; Olivieri, Bruno; Kopciuszyński, M.; Żurawek, Lucyna; Zdyb, R.; Krawiec, Mariusz

doi:10.3390/ma12142258

Cited by 15 publications

(22 citation statements)

References 47 publications

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“…Very importantly, recent measurements of angle-resolved inverse photoemission [ 27 ], by applying similar Si growth conditions, have confirmed those of angle-resolved direct photoemission performed on silicene at the Si(111) √3 × √3 R30°-Ag interface [ 26 ], and, thus, also the results from [ 22 , 25 ].…”

Section: Introductionsupporting

confidence: 56%

“…It has been widely demonstrated that, in addition to the synthesis of silicene and multilayer silicene, on a single crystal of Ag (111) [ 16 , 17 , 18 , 21 , 22 ], Ir (111) [ 23 ], and zirconium diboride [ 24 ], remarkably, they can be synthesized on Si(111), after the formation of the interface Si(111)√3 × √3 R30°-Ag [ 22 , 25 , 26 ]. This is always during the growth of the Si films, with both a constant low substrate temperature of ~200 °C and a low silicon solid source flux of ~10 −2 ML/min, overcoming the debate about whether Ag atoms migrating onto the surface would promote the continuation of the silicon crystal, rather than the growth of buckled honeycomb layers of silicene.…”

Section: Introductionmentioning

confidence: 99%

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Evidence of sp2-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi

et al. 2022

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One-monolayer (ML) (thin) and 5-ML (thick) Si films were grown on the α-phase Si(111)√3 × √3R30°-Bi at a low substrate temperature of 200 °C. Si films have been studied in situ by reflection electron energy loss spectroscopy (REELS) and Auger electron spectroscopy, as a function of the electron beam incidence angle α and low-energy electron diffraction (LEED), as well as ex situ by grazing incidence X-ray diffraction (GIXRD). Scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS) were also reported. The REELS spectra, taken at the Si K absorption edge (~1.840 KeV), reveal the presence of two distinct loss structures attributed to transitions 1s→π* and 1s→σ* according to their intensity dependence on α, attesting to the sp2-like hybridization of the silicon valence orbitals in both thin and thick Si films. The synthesis of a silicon allotrope on the α-phase of Si(111)√3 × √3R30°-Bi substrate was demonstrated by LEED patterns and GIXRD that discloses the presence of a Si stack of 3.099 (3) Å and a √3 × √3 unit cell of 6.474 Å, typically seen for multilayer silicene. STM and STS measurements corroborated the findings. These measurements provided a platform for the new √3 × √3R30° Si allotrope on a Si(111)√3 × √3 R30°-Bi template, paving the way for realizing topological insulator heterostructures from different two-dimensional materials, Bi and Si.

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Section: Introductionsupporting

confidence: 56%

Section: Introductionmentioning

confidence: 99%

Evidence of sp2-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi

et al. 2022

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“…So far, silicene systems have been successfully synthesized by the epitaxial growth on various substrate surfaces. Monolayer silicene with different sizes of unit cells has been produced on several substrates, such as Si(111) -Ag template 1,2 , Ag(111) (4 × 4) 3,4 , Ir(111) () 5 and ZrB 2 (0001) (2 × 2) 6 . Such a buckled single-layer honeycomb lattice was clearly identified by high-resolution measurements of STM and low-energy electron diffraction.…”

Section: Introductionmentioning

confidence: 99%

Rich Magnetic Quantization Phenomena in AA Bilayer Silicene

Shih

Gumbs

et al. 2019

Sci Rep

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The rich magneto-electronic properties of AA-bottom-top (bt) bilayer silicene are investigated using a generalized tight-binding model. The electronic structure exhibits two pairs of oscillatory energy bands for which the lowest conduction and highest valence states of the low-lying pair are shifted away from the K point. The quantized Landau levels (LLs) are classified into various separated groups by the localization behaviors of their spatial distributions. The LLs in the vicinity of the Fermi energy do not present simple wave function modes. This behavior is quite different from other two-dimensional systems. The geometry symmetry, intralayer and interlayer atomic interactions, and the effect of a perpendicular magnetic field are responsible for the peculiar LL energy spectra in AA-bt bilayer silicene. This work provides a better understanding of the diverse magnetic quantization phenomena in 2D condensed-matter materials.

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“…Nowadays, diffraction patterns can be typically recorded with the help of CCD cameras. RHEED observations can be conducted both for low-index surfaces and vicinal surfaces (e.g., [ 23 , 24 ]). Information on the arrangement of atoms at the sample surface can be extracted by analyzing the diffraction patterns.…”

Section: Materials and Methodologymentioning

confidence: 99%

Simplified Determination of RHEED Patterns and Its Explanation Shown with the Use of 3D Computer Graphics

et al. 2021

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The process of preparation of nanostructured thin films in high vacuum can be monitored with the help of reflection high energy diffraction (RHEED). However, RHEED patterns, both observed or recorded, need to be interpreted. The simplest approaches are based on carrying out the Ewald construction for a set of rods perpendicular to the crystal surface. This article describes how the utilization of computer graphics may be useful for realistic reproduction of experimental conditions, and then for carrying out the Ewald construction in a reciprocal 3D space. The computer software was prepared in the Java programing language. The software can be used to interpret real diffractions patterns for relatively flat surfaces, and thus it may be helpful in broad research practice.

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New Findings on Multilayer Silicene on Si(111)√3×√3R30°–Ag Template

Cited by 15 publications

References 47 publications

Evidence of sp2-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi

Evidence of sp2-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi

Rich Magnetic Quantization Phenomena in AA Bilayer Silicene

Simplified Determination of RHEED Patterns and Its Explanation Shown with the Use of 3D Computer Graphics

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