New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

Abstract

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (in-situ STM-TEM). As suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending.

Emerging Applications of Boron Nitride Nanotubes in Energy Harvesting, Electronics, and Biomedicine

“…During the past few years, applications of BNNTs have been demonstrated on the basis of their unique properties not found on CNTs. These include, for example, in situ probing of mechano-electronic or piezoelectricity in BNNTs, transistors and switches without semiconductors, − giant osmotic energy conversion, the formation of two-dimensional gold quantum dots with optical bandgaps on BNNTs, high-brightness fluorophores for biomedical application, and the formation of atomic chains inside BNNTs for novel transistor application . Here we will review some of these emerging applications as schematically summarized in Figure .…”

“…Some of the subgraphics are reprinted in part with permission from . Copyright 2008 Institute of Physics Publishing; from ref . Copyright 2016 Springer Nature; from .…”

Boron Nitride Nanotubes: Recent Advances in Their Synthesis, Functionalization, and Applications

“…Functionalization and potential applications of BNNTs in composites and bio-medicine will then be discussed. It is noted that electrically insulating BNNTs were recently being used for applications in digital switches when functionalized with metallic quantum dots [16,17] and graphene [18]. However, electronic device application will not be reviewed here at this early stage of the research.…”

High Crystallinity Boron Nitride Nanosheets: Preparation and the Property of BNNSs/Polyvinyl Alcohol Composite Film

“…无 机 材 料 学 报 第 34 卷 自 2004 年首次以石墨为原料分离制备出石墨 烯以来, 以石墨烯为代表的各种二维纳米材料日渐 成为研究的热点 [1] 。作为 III-V 主族化合物的氮化硼 主要有六方(h-BN)、立方(c-BN), 菱方(r-BN)和纤锌 矿(w-BN) [2] 四种稳定结构, 其中 h-BN 具有与石墨十 分相似的层状结构, 其单层厚度约 0.4 nm, 层内 B 和 N 原子通过 sp 2 杂化形成蜂窝状六元环结构, 而 层与层之间通过范德华力结合 [3] 。 h-BN 纳米片 (BNNSs)具有十分优异的绝缘性、化学稳定性、生 物相容性以及热学性能 [4][5][6][7][8][9][10][11][12] , 在航空航天、生物医 药、减摩以及半导体等领域 [13][14][15][16][17][18] 都展现出极其广阔 的应用前景。 迄今人们已经探索出多种制备氮化硼纳米材料 的技术和方法, 如: 微机械剥离法 [19] 、涡流液体剥 离法 [20] 、超声法 [21] 、化学气相沉积(CVD) [22] 与外延生 长 [23] [27] 以及其它物质为模板的 BNNSs 合 成研究 [28][29][30][31]…”