New high-pressure phases of 
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 and 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoTe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>

Kohulák, Oto; Martoňák, Roman

doi:10.1103/physrevb.95.054105

Cited by 25 publications

(13 citation statements)

References 33 publications

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“…Previous studies based on DFT calculations show that the MoTe 2 lattice symmetry is maintained up to 50 GPa [12]; this prediction is in agreement with high-pressure Raman findings [13][14][15][16] up to ∼ 30 GPa, with the number of peaks unchanged and their position continuously shifting towards higher frequencies on increasing pressure. As to the electronic properties, theoretical and experimental works indicated the occurrence of a pressure-induced metallization although the transition pressure value is still controversial.…”

Section: Introductionsupporting

confidence: 89%

“…The peak central frequency ω 0 (figure 3(c)) shifts toward higher values on increasing pressure, as expected. We remind that up to 50 GPa no evidence for a structural transition has ever been found, neither theoretically [12] nor experimentally [13][14][15]. Therefore, the weak anomaly observed at around 13 GPa in the pressure dependence of the peak frequency ω 0 could be ascribed to some electronic effect.…”

Section: The Fano Resonancementioning

confidence: 79%

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Broadband Infrared Study of Pressure-Tunable Fano Resonance and Metallization Transition in 2H-MoTe2

Stellino¹,

Capitani²,

Ripanti³

et al. 2021

Preprint

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High pressure is a proven effective tool for modulating inter-layer interactions in semiconducting transition metal dichalcogenides, which leads to significant band structure changes. Here we present an extended infrared study of the pressure-induced semiconductor-to-metal transition in 2H-MoTe2, which reveals that the metallization process at 13÷15 GPa is not associated with the indirect band gap closure, occuring at 24 GPa. A coherent picture is drawn where n-type doping levels just below the conduction band minimum play a crucial role in the early metallization transition. Doping levels are also responsible for the asymmetric Fano line-shape of the E1u infrared-active mode, which has been here detected and analyzed for the first time in a Transition Metal Dichalcogenide compound. The pressure evolution of the phonon profile under pressure shows a symmetrization in the 13÷15 GPa pressure range, which occurs simultaneously with the metallization and confirms the scenario proposed for the high pressure behaviour of 2H-MoTe2.

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Section: Introductionsupporting

confidence: 89%

Section: The Fano Resonancementioning

confidence: 79%

Broadband Infrared Study of Pressure-Tunable Fano Resonance and Metallization Transition in 2H-MoTe2

Stellino¹,

Capitani²,

Ripanti³

et al. 2021

Preprint

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“…[ 23,24 ] Actually, a nonlayered tetragonal I4/mmm, P4/mmm, or I4 1 /amd structure has always been predicted to be the most stable phase under the high pressure above 100 GPa for several TMDs, such as 2H‐NbS 2 , 2H‐NbSe 2 , 2H‐MoS 2 , 2H‐MoSe 2 , 1T‐TiS 2 , and 1T'‐ReS 2 , et al. [ 19,20,22,45,46 ] Regrettably, the XRD pattern of our new phase shows no characteristic of these tetragonal structures. Meanwhile, in our previous work on 1T‐TaS 2 , we found that the original 1T structure eventually transforms to a nonlayered I4/mmm phase with re‐enhanced superconductivity under high pressure.…”

Section: Resultsmentioning

confidence: 92%

Record‐High Superconductivity in Transition Metal Dichalcogenides Emerged in Compressed 2H‐TaS₂

Dong

Pan

et al. 2022

Advanced Materials

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Pressure has always been an effective method for uncovering novel phenomena and properties in condensed matter physics. Here, an electrical transport study is carried on 2H‐TaS2 up to ≈208 GPa, and an unexpected superconducting state (SC‐II) emerging around 86.1 GPa with an initial critical temperature (Tc) of 9.6 K is found. As pressure increases, the Tc enhances rapidly and reaches a maximum of 16.4 K at 157.4 GPa, which sets a new record for transition metal dichalcogenides (TMDs). The original superconducting state (SC‐I) is found to be re‐enhanced above 100 GPa after the recession around 10 GPa, and coexists with SC‐II to the highest pressure applied in this work. In situ high‐pressure X‐ray diffraction and Hall effect measurements reveal that the occurrence of SC‐II is accompanied by a structural modification and a concurrent enhancement of hole carrier density. The new high‐Tc superconducting state in 2H‐TaS2 can be attributed to the change of the electronic states near the Fermi surface, owing to pressure‐induced interlayer modulation. It is the first time finding this remarkable superconducting state in TMDs, which not only brings a new broad of perspective on layered materials but also expands the field of pressure‐modified superconductivity.

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“…However, Aksoy et al [19] have observed a discontinuity in the ratio of Dc c 0 ( )/ Da a 0 ( ) (c and a are the lattice parameters with subscript 0 referring to ambient pressure) at 10 GPa. A recent theoretical study predict tetragonal phase with space group P mmm 4 to become stable in MoSe 2 above 118 GPa [20]. Though the above studies on layered MoSe 2 show metallization of the sample without any structural transition under stress, a complete experimental characterization of the exfoliated MoSe 2 sample at high pressure is lacking.…”

Section: Introductionmentioning

confidence: 98%

High pressure anomalies in exfoliated MoSe₂: resonance Raman and x-ray diffraction studies

Saha

Ghosh

Mazumder

et al. 2020

Mater. Res. Express

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Detailed high pressure Resonance Raman (RR) Spectroscopy and x-ray diffraction (XRD) studies are carried out on 3-4 layered MoSe 2 obtained by liquid exfoliation. Analysis of ambient XRD pattern and RR spectra indicate the presence of a triclinic phase along with its parent hexagonal phase. Slope change in the linear behavior of reduced pressure (H) with respect to Eulerian strain ( f E ) is observed at about 13 GPa in hexagonal phase and at about 17 GPa for the triclinic phase. High pressure Raman measurements using two different pressure transmitting media (PTM) show three linear pressure regions, separated by pressure values around which anomalies in the structure are observed. A broad minimum in the FWHM values of E g 2 1 mode at about 10-12 GPa indicate to an electron-phonon coupling. Above 33 GPa the sample completely gets converted to the triclinic structure, which indicates the importance of strain in structural as well as electronic properties of two dimensional materials.

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New high-pressure phases of MoSe2 and MoTe2

Cited by 25 publications

References 33 publications

Broadband Infrared Study of Pressure-Tunable Fano Resonance and Metallization Transition in 2H-MoTe2

Broadband Infrared Study of Pressure-Tunable Fano Resonance and Metallization Transition in 2H-MoTe2

Record‐High Superconductivity in Transition Metal Dichalcogenides Emerged in Compressed 2H‐TaS₂

High pressure anomalies in exfoliated MoSe₂: resonance Raman and x-ray diffraction studies

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New high-pressure phases of MoSe2 and MoTe2

Cited by 25 publications

References 33 publications

Broadband Infrared Study of Pressure-Tunable Fano Resonance and Metallization Transition in 2H-MoTe2

Broadband Infrared Study of Pressure-Tunable Fano Resonance and Metallization Transition in 2H-MoTe2

Record‐High Superconductivity in Transition Metal Dichalcogenides Emerged in Compressed 2H‐TaS2

High pressure anomalies in exfoliated MoSe2: resonance Raman and x-ray diffraction studies

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Record‐High Superconductivity in Transition Metal Dichalcogenides Emerged in Compressed 2H‐TaS₂

High pressure anomalies in exfoliated MoSe₂: resonance Raman and x-ray diffraction studies