New Hybrid Generation of Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs

Galembeck, Egon Henrique Salerno; Gimenez, Salvador Pinillos

doi:10.1109/ted.2022.3167944

Cited by 5 publications

(6 citation statements)

References 24 publications

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“…We also observe that the PAMDLE is presented in the OM structure and therefore its effective channel length (Leff_OM) can be calculated by Equation [5] (1):…”

Section: Octagonal Layout Style For Mosfetmentioning

confidence: 99%

“…Figure 9 shows a simplified three-dimensional (3D) structure of the Half-Diamond MOSFET (HDM) (5). Where in Figure 9, b and B and are the smallest and largest channel lengths, respectively, α is the angle between the metallurgical pn junctions of the drain and channel interface, and W and L are respectively their channel width and length (5).…”

Section: The First Element Of the Layout Styles Of The Second Generat...mentioning

confidence: 99%

“…In Figure 10 By analyzing Figure 10, one can observe that the HDM maintains the LCE effect of the DM, and that its RLEF along the channel length (ε //_H ⃗⃗⃗⃗⃗⃗⃗⃗⃗⃗⃗⃗⃗⃗⃗ = ε // ⃗⃗⃗⃗⃗⃗⃗ + ε // ⃗⃗⃗⃗⃗⃗⃗ ) is higher than the one found in the RM counterpart (ε //_ ⃗⃗⃗⃗⃗⃗⃗⃗⃗⃗⃗⃗ ), which is composed of only one LEF vectorial component (ε // ⃗⃗⃗⃗⃗⃗⃗ ) due to LCE. As a result, the mobile charge carriers in the channel region of HDM experience a higher drift velocity than those in the RM counterpart, leading to a higher IDS in HDM, assuming that both devices have the same AG, W, and bias conditions (5). The HDM structure, like DM, presents different channel lengths and can be represented by the parallel electrical connection of infinitesimal conventional MOSFETs with the same infinitesimal channel widths (dW).…”

Section: The First Element Of the Layout Styles Of The Second Generat...mentioning

confidence: 99%

“…The HDM structure, like DM, presents different channel lengths and can be represented by the parallel electrical connection of infinitesimal conventional MOSFETs with the same infinitesimal channel widths (dW). Thus, the HDM Leff (Leff_HDM) can be calculated by Equation [1], analogously to DM Leff (5).…”

Section: The First Element Of the Layout Styles Of The Second Generat...mentioning

confidence: 99%

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(Invited) New Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs, Considering a Wide Range of High Temperatures

Gimenez¹,

Galembeck²

2023

ECS Trans.

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The manuscript performs a review of the differentiated new layout styles for the Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that can boost their electrical performance and ionizing radiation tolerance. Firstly, we present the elements of the first generation of layout styles, the effects intrinsic to their structures, and the first-order analytical models of their drain current. After, we study the first element of the second generation of layout styles, which presents a hybrid gate geometry, aiming mainly to further reduce its effective channel length in comparison to those reached by the first generation and consequently further boosting the electrical performance of the analog MOSFETs. The experimental results in room temperature and high temperature found to show that the first element of the second generation can be considered an alternative hardness-by-design to improve the electrical performance and ionizing radiation of the analog MOSFETs.

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“…We also observe that the PAMDLE is presented in the OM structure and therefore its effective channel length (Leff_OM) can be calculated by Equation [5] (1):…”

Section: Octagonal Layout Style For Mosfetmentioning

confidence: 99%

Section: The First Element Of the Layout Styles Of The Second Generat...mentioning

confidence: 99%

Section: The First Element Of the Layout Styles Of The Second Generat...mentioning

confidence: 99%

Section: The First Element Of the Layout Styles Of The Second Generat...mentioning

confidence: 99%

See 2 more Smart Citations

(Invited) New Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs, Considering a Wide Range of High Temperatures

Gimenez¹,

Galembeck²

2023

ECS Trans.

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“…Furthermore, recent studies have demonstrated the viability of HDM. It is important to highlight that this study is based on experimental data and it is an extension of a work performed with HDM, which was based on three-dimensional (3D) numerical simulations and intend to expand the comparison to the DM [10] [14].…”

Section: Gabriel Augusto Da Silva and Salvador Pinillos Gimenezmentioning

confidence: 99%

Second Generation of Layout Styles to Further Boosting the Electrical Performance and Reducing the Die Area of Analog MOSFETs

DaSilva

Gimenez

2022

JICS

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Previous studies have been showing that the first generation of layout styles composed by the Diamond (hexagonal), Octo (octagonal) and Ellipsoidal gate shapes for implementing of the planar and three-dimensional MOSFETs are is capable of boosting their analog and digital electrical performances and also by reducing used die areas, when we replace conventional Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), that present rectangular gate shape, by those implemented by these innovative layout styles. In order to further boosting these features obtained by the use of first generation of layout styles, we are introducing one of elements of the second generation of layout styles for MOSFETs, intitled Half-Diamond. This new proposal is an evolution of Diamond layout style, in which it is able to preserve the Longitudinal Corner Effect (LCE), the Parallel Connection of MOSFETs with Different Channel Lengths Effect (PAMDLE) and the Deactivation of Parasitic MOSFETs in Bird’s Beaks Regions (DEMPAMBBRE) effects of the first generation and also of further reducing the dimensions of conventional MOSFETs (CM) in which the Diamond MOSFETs have gotten to do. Thus, this work performs an experimental comparative study between the electric performances of MOSFETs implemented with the Half-Diamond, Diamond and Conventional layout styles, regarding the analog Complementary MOS (CMOS) integrated circuits (ICs) applications, which their channel lengths are not usually designed with the minimum dimension (Lmin) allowed by the CMOS ICs manufacturing processes. The results obtained show that, for instance, the saturation drain current normalized by the aspect ratio and low-frequency open-loop voltage gain, in dB, of MOSFET implemented with the Half-Diamond layout style (HDM) are 17% and 3.5% higher, respectively, than those found in CM counterparts. Besides, by using Half-Diamond layout style, it is possible of further reducing the die areas of analog CM and consequently of the analog CMOS ICs applications, in comparison to those reached by the use of Diamond layout styles, regarding a 180 nm Bulk CMOS ICs technology node.

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Introduction

Gimenez

Galembeck²

2023

Differentiated Layout Styles for MOSFETs

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New Hybrid Generation of Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs

Cited by 5 publications

References 24 publications

(Invited) New Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs, Considering a Wide Range of High Temperatures

(Invited) New Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs, Considering a Wide Range of High Temperatures

Second Generation of Layout Styles to Further Boosting the Electrical Performance and Reducing the Die Area of Analog MOSFETs

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