2005
DOI: 10.1016/j.elspec.2004.07.004
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New improvements in energy and spatial (x, y, z) resolution in AES and XPS applications

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Cited by 62 publications
(36 citation statements)
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“…Over the past several decades, high resolution X-ray photoelectron spectroscopy has become very popular due to significant improvements in energy resolution [51]. The great number of publications demonstrates that XPS can provide trustworthy information regarding the physico-chemistry of a material surface.…”
Section: Xps Core-level and Valence Band: Fwhm Lineshapes And Chemicmentioning
confidence: 99%
See 1 more Smart Citation
“…Over the past several decades, high resolution X-ray photoelectron spectroscopy has become very popular due to significant improvements in energy resolution [51]. The great number of publications demonstrates that XPS can provide trustworthy information regarding the physico-chemistry of a material surface.…”
Section: Xps Core-level and Valence Band: Fwhm Lineshapes And Chemicmentioning
confidence: 99%
“…Where is the full width at half-maximum (FWHM) of the x-ray line, is the proper absolute energy resolution of the analyzer operating in the constant analyzer transmission (CAT) mode, which depends on the pass energy applied [51], is the natural line width of the orbital in the atom, and it has been assumed that each component can be represented by a Gaussian function. As the analyzer energy window can be selected so that it does not limit the resolution, the energy resolution is often controlled by the width of the X-ray line and by the intrinsic width of .…”
Section: Eq1mentioning
confidence: 99%
“…Quantification through spectra fitting. 122 • Relative energy resolution: 0.05% (SCA/CHA analyzer) 133 • Lateral resolution: <10 nm 122 • Detection limit: 0.1 at.% 122…”
Section: Page 10 Of 39 Acs Paragon Plus Environment Chemistry Of Matementioning
confidence: 99%
“…Today, Auger electron spectroscopy (AES) (Reniers & Tewell, 2005;Zalar et al, 2005) and secondary ion (neutral) mass spectrometry (SIMS) (McPhail, 2006;Mulcahy et al, 2006) are suitable methods used for the depth profiling of the first atomic layers of a surface. SIMS is more sensitive and, therefore, wellsuited for low-concentration layers and dopant profiles.…”
Section: A State-of-the-art Surface Methods For Depth Profilingmentioning
confidence: 99%