New infrared absorption bands related to interstitial oxygen in silicon

Hallberg, T.; Мурин, Л. И.; Lindström, J. L.; Markevich, V. P.

doi:10.1063/1.368407

Cited by 28 publications

(31 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…As discussed in Ref. 17, there are two ways in which n and d 2 can affect the value of M. Coarsely speaking, the product of n and d 2 controls the period of the fringe, while the amplitude of the fringe depend on n and is independent of thickness, so it is indeed possible to infer, from a single spectrum, both the refractive index and the thickness of the sample. This was attempted by first varying the input for the ellipsometric refractive index in the UV (or visible) spectral region in order to match the amplitude of the fringes.…”

Section: Fully Coherent Correction Methodsmentioning

confidence: 99%

“…Unfortunately, as discussed in Ref. 17, there are two possible values of the refractive index of the film material that produce fringes with the same amplitude. It was thus helpful to have ellipsometric measurement of the refractive index as a guide for which value to use, or as input to an automated procedure.…”

Section: Fully Coherent Correction Methodsmentioning

confidence: 99%

“…It was found that the optical costants of the film produced by the eighth iteration are, for all intents and purposes, virtually indistinguishable from those produced by the seventh iteration. 16,17 Thus in our previous calculations, we stopped iterations after eight cycles.…”

Section: Fully Coherent Correction Methodsmentioning

confidence: 99%

“…Although the substrate material (most often silicon) may be nominally transparent in the mid IR, the weak absorption features, that would not be noticed were the substrate optically thin, are magnified due to a large path length (on the order of 1 mm). 17,18 In this case, transmission spectra of the substrate/wafer can be fortunately acquired prior to z E-mail: milan@mevtechnologies.com; sean.king@intel.com coating and then subtracted from the spectrum of the coated wafer. To the first approximation, this removes absorption due to the substrate leaving just the spectrum of the thin film.…”

Section: Thin Film T-ftir Background Subtraction and Interference Frimentioning

confidence: 99%

“…The presence of interference fringes, as well as the effects caused by changes in refractive index with wavelength, are well known optical effects and expected for these types of samples. 16,17 As we will discuss below, there is also another, less known effect that causes the measured absorbance to have a strong undulating behavior as a function of film thickness. The magnitude of this effect is significant and it requires correction before T-FTIR spectra can be utilized for quantitative analysis.…”

mentioning

confidence: 99%

See 4 more Smart Citations

Analysis of Low-k Dielectric Thin Films on Thick Substrates by Transmission FTIR Spectroscopy

Milošević¹,

King²

2014

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Transmission Fourier-transform infrared (T-FTIR) spectra of thin films on thick substrates are characterized by strong interference fringes that hamper quantitative analysis of the observed thin film absorption bands. In this article, we review and present methods for removing these fringes to extract the pure thin film absorption coefficient from the experimental T-FTIR spectra. To illustrate the benefits of a recently developed method for removing such fringes, we analyze T-FTIR spectra for a series of a-SiO2 and a-SiOC:H thin films typically utilized in nano-electronic interconnect structures as low permittivity (i.e. low-k) interlayer dielectrics. The sources and magnitude of the errors present in analysis of both the uncorrected and corrected experimental T-FTIR spectra are compared. We demonstrate that conventional analysis of the uncorrected low-k a-SiOC:H T-FTIR spectra can lead to substantial quantitative errors that are dramatically reduced using the described method for appropriately removing the experimental thin film fringes.

show abstract

Section: Fully Coherent Correction Methodsmentioning

confidence: 99%

Section: Fully Coherent Correction Methodsmentioning

confidence: 99%

Section: Fully Coherent Correction Methodsmentioning

confidence: 99%

Section: Thin Film T-ftir Background Subtraction and Interference Frimentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Analysis of Low-k Dielectric Thin Films on Thick Substrates by Transmission FTIR Spectroscopy

Milošević¹,

King²

2014

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

Local vibrational modes of interstitial boron–interstitial oxygen complex in silicon

Мурин

Ластовский

Tolkacheva

et al. 2016

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.In the present work, we report local vibrational mode (LVM) related absorption lines which are assigned to the complex incorporating interstitial boron and interstitial oxygen atoms (B i O i ), a possible precursor of the center responsible for lightinduced degradation (LID) in solar cells produced from boron-doped oxygen-rich silicon. Fourier transform infrared absorption (IR) spectroscopy was used for detection and analysis of absorption lines due to defects which were created in boron-doped Czochralski-grown Si samples by irradiation with 6 or 10 MeV electrons at room temperature. Changes in the IR absorption spectra upon isochronal annealing of the irradiated samples in the temperature range 75-225 8C have also been monitored. A set of previously unreported LVM lines with the same formation and elimination behavior has been studied. The most intense lines of the set are found to be at 991, 721, and 550 cm À1 . On the basis of an analysis of changes in intensity of the lines with the concentrations of impurities in the silicon and on the similarity of their annealing features with those for the DLTS signal due to the B i O i center, it is argued that the lines are related to the LVMs of this defect. The positions of the lines have been compared with the previously reported LVMs derived from ab initio modeling calculations for different configurations of the B i O i complex. A configuration having calculated LVMs close to those determined experimentally has been found and the origins of the modes are discussed.

show abstract

Extended theory for local‐phonon‐coupled low‐energy anharmonic excitation of oxygen in silicon: Calculation of line intensity ratio

Yamada-Kaneta

2003

phys. stat. sol. (c)

View full text Add to dashboard Cite

To describe consistently the energies and the intensities of the infrared absorption lines of oxygen in silicon for the 30, 600, 1100, 1200, 1700, and 1800 cm −1 bands, an original model for the two-dimensional low-energy excitation of oxygen coupled to the A 2u local mode has been expanded so as to include the coupling to the A 1g local mode. Calculations with the expanded model have reproduced the overall energy levels that describe well the energies of all the absorption lines and the relative oscillator strengths of the main lines at 1205.7 and 648.2 cm −1. The former and the latter are, respectively, caused by the coupling of the two-dimensional low-energy anharmonic excitation to the A 2u and A 1g local modes. Thus, it is considered that this expanded model has properly taken into account the essential interaction terms. However, the reason for the values of the oscillator strengths calculated for the 1748.6 and 1819.5 cm −1 lines being too small should be clarified.

show abstract

New infrared absorption bands related to interstitial oxygen in silicon

Cited by 28 publications

References 23 publications

Analysis of Low-k Dielectric Thin Films on Thick Substrates by Transmission FTIR Spectroscopy

Analysis of Low-k Dielectric Thin Films on Thick Substrates by Transmission FTIR Spectroscopy

Local vibrational modes of interstitial boron–interstitial oxygen complex in silicon

Extended theory for local‐phonon‐coupled low‐energy anharmonic excitation of oxygen in silicon: Calculation of line intensity ratio

Contact Info

Product

Resources

About