New insights on Ni-Si system for microelectronics applications

Pandey, R. K.; Maity, G.; Pathak, Sachin; Kalita, Parswajit; Dubey, Santosh

doi:10.1016/j.mee.2022.111871

Cited by 9 publications

(2 citation statements)

References 122 publications

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“…Silicon (Si) substrates come in a variety of shapes and sizes, and they are used in both research and industry studies. By increasing light trapping and reducing light reflection, patterned Si is well-liked and frequently used to increase solar cell efficiency 1,2 , for device construction of microelectromechanical systems 3 , and in numerous biological applications 4 . The photovoltaic market is led by silicon solar cells because they are inexpensive, simple to produce, and environmentally friendly 5,6 .…”

Section: Introductionmentioning

confidence: 99%

Double layered silicon nitride coated pyramid formation by etching on silicon substrate for photovoltaic application

Malik

Dey

Srivastava

et al. 2023

Women in Optics and Photonics in India 2022

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One of the most effective ways to decrease reflection losses, enhance the likelihood of light trapping, and boost light absorption is surface patterning of p-type monocrystalline Si(100). Monocrystalline silicon surfaces' reflectivity is significantly decreased by the surface texturing of pyramids. This study looked into and analyzed how much of a pyramid was produced on the top of p-type Si substrates when the etching parameters were altered during Si texturing. The light traps created by the pyramidal structures on the crystalline silicon surface improved the effectiveness of light absorption. The impact of pyramid size on percent reflectivity was examined, and it was found that the percent reflectance and pyramidal etching time had an inverse connection. The texturing procedure, which involved adjusting the amounts of sodium hydroxide (NaOH) and isopropyl alcohol (IPA), as well as the length of the etching process, were used to regulate the size of the pyramids. The optimal etching conditions in this study were found to be a solution made with 12 weight percent NaOH and 4 volume percent IPA at an etching temperature of 80 0 C and an etching period of 40 min for wet etching. Pyramid with etching time (40 min) are post-coated with single-and double-layered silicon nitride (Si3N4), their reflectivity is measured over wavelength of 380-850 nm, had the lowest average percent reflectance of the double-layered Si3N4 patterned Si surfaces, at 8.8%. The selection of the refractive index (n) and the thickness (t) for single (n=1.9, t=80 nm) and double layer (n=2.8 and t=38 nm for bottom layer and n=1.9, t=42 nm) Si3N4 was done according to the destructive interference condition satisfied i.e., minimum reflection for photovoltaic application.

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Section: Introductionmentioning

confidence: 99%

Double layered silicon nitride coated pyramid formation by etching on silicon substrate for photovoltaic application

Malik

Dey

Srivastava

et al. 2023

Women in Optics and Photonics in India 2022

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“…Mastering the growth of NiSi directly integrated from a silicon substrate remains a major challenge. The complete reaction pathways involved in NiSi formation are still debated [16,[26][27][28][29][30] thus making the industrial integration of Ni-based silicides difficult.…”

Section: -Introductionmentioning

confidence: 99%

A comprehensive atomistic picture of the as-deposited Ni-Si interface before thermal silicidation process

Donoso

Jay

Lam

et al. 2023

Applied Surface Science

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Numerical simulation of a highly efficient perovskite solar cell based on FeSi₂ photoactive layer

Njema,

Kibet,

Rono

et al. 2024

Nano Select

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The primary aim of this work is to investigate the use iron di‐silicide (FeSi2) as a photoactive layer in order to achieve superior performance in the solar cell architecture—ITO/TiO2/FeSi2/CuSCN/Ni. The optimum thickness of the absorber layer was found to be 1000 nm, which gave optimal properties of the proposed cell—a short‐circuit current density (Jsc) of 51.41 mAm−2, an open‐circuit voltage (Voc) of 0.93 V, a fill factor (FF) of 77.99%, and power conversion efficiency (PCE) of 37.17%. The introduction of an ultrathin interfacial layer between the electron transport layer (ETL), the perovskite interface, and the hole transport layer (HTL) enhanced the electrical output of the proposed solar cell. The Jsc increased to 51.86 mAcm−2, Voc rose to 0.97 V, while FF and PCE increased to 82.86% and 41.84%, respectively. Accordingly, the proposed cell architecture is promising and can be introduced into the manufacturing workflow for commercial applications. Moreover, because of its exceptional photon absorption capabilities, FeSi2 is a potentially excellent photoactive material for solar cell fabrication. The detailed findings of this study have therefore indicated that high‐performance FeSi2‐based solar can be achieved in future.

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New insights on Ni-Si system for microelectronics applications

Cited by 9 publications

References 122 publications

Double layered silicon nitride coated pyramid formation by etching on silicon substrate for photovoltaic application

Double layered silicon nitride coated pyramid formation by etching on silicon substrate for photovoltaic application

A comprehensive atomistic picture of the as-deposited Ni-Si interface before thermal silicidation process

Numerical simulation of a highly efficient perovskite solar cell based on FeSi₂ photoactive layer

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New insights on Ni-Si system for microelectronics applications

Cited by 9 publications

References 122 publications

Double layered silicon nitride coated pyramid formation by etching on silicon substrate for photovoltaic application

Double layered silicon nitride coated pyramid formation by etching on silicon substrate for photovoltaic application

A comprehensive atomistic picture of the as-deposited Ni-Si interface before thermal silicidation process

Numerical simulation of a highly efficient perovskite solar cell based on FeSi2 photoactive layer

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Numerical simulation of a highly efficient perovskite solar cell based on FeSi₂ photoactive layer