“…Silane, SiH 4 , is widely used in the semiconductor industry for deposition of silicon films, since it allows the production of SiH x ( x = 0−3) fragments in a well-controlled, chemically clean environment . Dissociation of silane is thus a primary step in many silicon deposition processes, and a number of studies have been devoted to CO 2 laser infrared multiphoton dissociation (IRMPD) of this molecule. − These studies suggest that collisions, and hence relatively high pressures, are necessary for efficient multiphoton pumping of SiH 4 to the dissociation threshold. Despite the fact that it might be key for developing a laser driven molecular beam epitaxy technique, there is little known about collision-free IRMPD of silane.…”