New MBE growth method for InSb quantum well boxes

Koguchi, Nobuyuki; Takahashi, Satoshi; Chikyow, Toyohiro

doi:10.1016/0022-0248(91)91064-h

Cited by 354 publications

(223 citation statements)

References 7 publications

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“…QD2 is an InGaAs/ GaAs QD structure grown without a WL by taking advantage of a modified MBE method, the heterogeneous droplet epitaxy ͑HDE͒. 18,19 The HDE growth method permits the assembling of nanometer size InGaAs inclusions in a GaAs matrix. The typical dimensions of the HDE-QDs are 30 nm base width and 12 nm height and the average In content of the QD is around 20%.…”

Section: Resultsmentioning

confidence: 99%

Quantum dot decoherence measured by ensemble photoluminescence

Gurioli

Sanguinetti

Mano

et al. 2005

Journal of Applied Physics

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We propose and experimentally demonstrate that a very simple, noninvasive, and common technique, i.e., standard nonresonant photoluminescence of large ensemble of quantum dots ͑QDs͒, can be used to determine the temperature dependence of homogeneous broadening. The method can be applied to a single quantum dot layer independently of the QD density and it allows to follow the increase of the homogeneous broadening up to high T. The experimental results show that different pictures apply depending on the QD size.

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Section: Resultsmentioning

confidence: 99%

Quantum dot decoherence measured by ensemble photoluminescence

Gurioli

Sanguinetti

Mano

et al. 2005

Journal of Applied Physics

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“…The TEM top views of islands from sample A, obtained with diffraction vector g = [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] clearly show Moiré fringes, due to the interference between the crystal lattice of the island (GaAs) and that the Si substrate ( Figure 11). EDS map scans show the same distribution of the Ga and As signals, which mimics the island shape, thus demonstrating the correct stoichiometry of the GaAs all over the island volume -i.e.…”

Section: Mullins Sekerka Instabilitymentioning

confidence: 99%

“…To overcome the SK growth limitations, a fully kinetic limited growth procedure called droplet epitaxy (DE) was introduced 3,4 . Unlike SK self-assembly, DE does not rely on strain for the formation of three dimensional nanostructures.…”

mentioning

confidence: 99%

Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory

et al. 2013

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We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures observed during droplet epitaxy. The crucial features of the model include the explicit and independent representation of atoms with different species and the ability to treat solid and liquid phases independently. Using this model, we examine nanostructural evolution in droplet epitaxy. The model faithfully captures several of the experimentally observed structures, including compact islands and nanorings. Moreover, simulations show the presence of Ga/GaAs core-shell structures that we validate experimentally. A fully analytical model of droplet epitaxy that explains the relationship between growth conditions and the resulting nanostructures is presented, yielding key insight into the mechanisms of droplet epitaxy.

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“…At this stage, a halo RHEED pattern was observed, indicating the formation of Ga droplets. 32 Next, the beam flux of Sb 4 was supplied on the sample surface to let Ga droplets react with Sb atoms. We then heated the sample for 1 minute under the Sb flux to desorb the excess Sb layer and promote the reaction between the Ga droplets and Sb atoms.…”

Section: Sample Growthmentioning

confidence: 99%

Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

et al. 2016

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We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy. We prepared two QD samples annealed at slightly different temperatures (380 o C and 400 o C) and carried out PL measurements. The 20 o C increase of the annealing temperature leads to (1) about 140 and 60 times stronger wetting layer (WL) luminescence at low and high P, (2) about 45% large energy shift of QD luminescence with P, and (3) the different P dependence of the PL intensity ratio between the QD and the WL. These differences of the PL characteristics are explained by the effects of the WL. C 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license

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New MBE growth method for InSb quantum well boxes

Cited by 354 publications

References 7 publications

Quantum dot decoherence measured by ensemble photoluminescence

Quantum dot decoherence measured by ensemble photoluminescence

Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory

Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

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