New method for III/V flux ratio calibration in MBE systems from arsenic pressure measurements

Faktor, D.; Veselý, M.; Harman, R.

doi:10.1016/0022-0248(93)90056-3

Cited by 2 publications

(1 citation statement)

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“…The P 2 flux was adjusted as follows. Using RHEED, we first found the value F 0 corresponding to the transition between the group-III-limited and group-V-limited growth on (100) GaP, where the effective atomic fluxes of both species are equal, as described previously for GaAs. ,, For growth, we adjusted it to 1.3 F 0 and kept the same Ga flux. The substrate was rotated (at a rate of 20–30 rpm) during growth and droplet consumption.…”

Section: Experimental Sectionmentioning

confidence: 99%

Dynamics of Droplet Consumption in Vapor–Liquid–Solid III–V Nanowire Growth

Pishchagin

Patriarche

Cattoni

et al. 2021

Crystal Growth & Design

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We study experimentally and theoretically the consumption of the apical gallium droplet that mediates the self-catalyzed vapor-liquid-solid growth of GaP nanowires. Consumption is achieved after growth by providing only phosphorous and its progress is monitored ex situ in nanowire arrays fabricated by molecular beam epitaxy. We develop detailed calculations of the process, taking into account four channels of liquid gallium consumption. These include the formation of GaP using phosphorous delivered to the droplet by direct impingement or after re-emission from the substrate. We show that two other channels contribute significantly, namely the diffusion of phosphorous along the sidewalls and gallium back diffusion from the droplet. All currents are calculated analytically as a function of droplet geometry. Complementary experiments are performed to extract the two model parameters governing the diffusion currents. We then compute numerically the dynamics of the system exposed to a constant external phosphorous flux. Our quantitative model allows one to predict how droplet contact angle and radius change while operating blindly in a standard epitaxy chamber. Controlling these parameters is crucial for tailoring the crystal phase of III-V nanowires and fabricating quantum size structures.

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Section: Experimental Sectionmentioning

confidence: 99%