2009
DOI: 10.1016/j.physc.2009.05.219
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New Nb multi-layer fabrication process for large-scale SFQ circuits

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Cited by 66 publications
(41 citation statements)
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“…The device structures in the advanced process have changed slightly as fabrication technology has progressed [3]- [8]. We previously developed the Nb 10-layer fabrication process [8].…”
Section: Device Structure Of Advanced Processmentioning
confidence: 99%
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“…The device structures in the advanced process have changed slightly as fabrication technology has progressed [3]- [8]. We previously developed the Nb 10-layer fabrication process [8].…”
Section: Device Structure Of Advanced Processmentioning
confidence: 99%
“…The standard process involves using up to four Nb layers and Josephson junctions (JJ) with a critical current density of 2.5 kA/cm 2 [1], [2]. On the other hand, the advanced process uses six to ten Nb layers and JJs with a critical current density of 10 kA/cm 2 [3]- [8]. Although the advanced process has disadvantages in a longer turn-around time of the fabrication and a larger amount of the photomask costs, it enables SFQ circuits to operate at a higher frequency and to be integrated at a higher density than the standard process.…”
Section: Introductionmentioning
confidence: 99%
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“…Thus, we can obtain the scaling law that the miniaturization leads to higher integration and higher operating frequency. [11] and that with the ISTEC 10-kA/cm 2 technology [12], respectively. As indicated by the scaling law, the clock period for the DFF with the 10-kA/cm 2 technology becomes almost half compared to the DFF made with the 2.5-kA/cm 2 technology.…”
Section: Rapid Single Flux Quantum Circuitsmentioning
confidence: 99%