New octahedral Ta(V) hydrazido-substituted compounds for atomic layer deposition: Syntheses, X-ray diffraction structures of TaCl(NMe2)3[N(TMS)NMe2] and Ta(NMe2)4[N(TMS)NMe2], and fluxional behavior of the amido and hydrazido ligands in solution

Allyl Ligand Reactivity in Tantalum(V) Compounds: Experimental and Computational Evidence for Allyl Transfer to the Formamidinate Ligand in fac-Ta(NMe2)3(η1-allyl)[iPrNC(H)NiPr] via a Metallo-Claisen Rearrangement

“…Industrial demands for new, single-source tantalum compounds remain high. In particular, new tantalum compounds that are capable of serving as precursors for the construction of TaN barrier layers and Ta 2 O 5 gate insulators in ULSI devices are actively sought after by the microelectronics industry . In the case of TaN diffusion barriers, the major impetus is traced to the fabrication of electronic devices beyond the 45 nm mode, and this is best achieved through an ALD protocol employing a volatile tantalum-based precursor .…”