New ONO Layer Using Nitrogenized Bottom Oxide for Flash Memory Application

Lin, Chih-Long; Chen, J.; Su, Hsiu-Wei; Shih, J.R.; Kuo, D.S.; Liang, Mong–Song

doi:10.7567/ssdm.1999.c-12-4

Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials 1999

DOI: 10.7567/ssdm.1999.c-12-4

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New ONO Layer Using Nitrogenized Bottom Oxide for Flash Memory Application

Chih-Long Lin¹,

J. Chen²,

Hsiu-Wei Su³

et al.

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New ONO Layer Using Nitrogenized Bottom Oxide for Flash Memory Application

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