New Opportunities for High‐Performance Source‐Gated Transistors Using Unconventional Materials

Abstract

Source-gated transistors (SGTs), which are typically realized by introducing a source barrier in staggered thin-film transistors (TFTs), exhibit many advantages over conventional TFTs, including ultrahigh gain, lower power consumption, higher bias stress stability, immunity to short-channel effects, and greater tolerance to geometric variations. These properties make SGTs promising candidates for readily fabricated displays, biomedical sensors, and wearable electronics for the Internet of Things, where low power dissipation, high performance, and efficient, low-cost manufacturability are essential. In this review, the general aspects of SGT structure, fabrication, and operation mechanisms are first discussed, followed by a detailed property comparison with conventional TFTs. Next, advances in high-performance SGTs based on silicon are first discussed, followed by recent advances in emerging metal oxides, organic semiconductors, and 2D materials, which are individually discussed, followed by promising applications that can be uniquely realized by SGTs and their circuitry. Lastly, this review concludes with challenges and outlook overview.

Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors

“…4d-f, I DS linearly increases with increasing V DS in the initial linear regime, and I DS is saturated at the high V DS regimes for overall V GS , which means a pinch-off of the channel near the drain end at high V DS . Note that such a pinch-off can be observed only when the dielectric layer can induce even charge accumulation at the channel region at a given gate dielectric 42,43 .…”

New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors

“…13 When the depletion region contacts the interface at a certain V DS , the channel is pinched off and the I DS saturates. 14 Therefore, the I DS in the SGT is mainly controlled by source contact rather than the channel, resulting in the low V SAT and saturated current (I SAT ). It is worth pointing out that the V SAT of the SGT often displays a small value of 1 V in the literature, which can be easily controlled by V GS .…”

“…Therefore, the I DS in the SGT is mainly controlled by source contact rather than the channel, resulting in the low V SAT and saturated current ( I SAT ). It is worth pointing out that the V SAT of the SGT often displays a small value of 1 V in the literature, which can be easily controlled by V GS . , Beyond the electrical gating of V GS , illumination can also control the carrier concentration and depletion envelope, which can further control the V SAT of the SGT. In this case, photovoltage signal is more favorable to be measured and evaluate the performance of the SGT photodetector.…”

50.2: Invited Paper: Contact‐controlled transistors:critical design parameters

“…In staggered-electrode topology, the presence of the rectifying source contact completely changes the operation. As such, source-gated transistors (SGTs) [1], [2] and multimodal transistors (MMTs) [3] present interesting properties for signal amplification [4], and improved tolerance to process variability and bias stress.…”

“…With increasing interest in this class of TFTs [2], a good understanding of the critical parameters will lead to advantageous device behavior, especially in designs that also include conventional TFTs, which may introduce optimization conflicts.…”