2010
DOI: 10.1088/1748-0221/5/07/c07011
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New optical technology for low mass intelligent trigger and readout

Abstract: New optical devices offer the potential for reductions in mass, power, and cost of data paths for on-board trigger and readout of tracking detectors. We give examples of optical modulators, MEMS beam steering devices, and optical coupling. We also present results on radiation hardness of materials as well as different approaches to using optics in triggering.

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Cited by 13 publications
(7 citation statements)
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“…However, VCSELs have proven to be somewhat unreliable in these particle physics applications (Weidberg, 2012). One possible solution to the VCSEL reliability problem is to use optical modulators with a continuous wave laser instead of modulated lasers (Underwood et al, 2010). This allows the use of continuous wave lasers outside the tracking volume and very low power modulators (50 µW at 1 GHz, scaling with frequency) versus 16 mW for approximately 300 µW of light from a VCSEL and 45 mW for a 10 GHz driver.…”
Section: O High Speed Readout Applicationsmentioning
confidence: 99%
“…However, VCSELs have proven to be somewhat unreliable in these particle physics applications (Weidberg, 2012). One possible solution to the VCSEL reliability problem is to use optical modulators with a continuous wave laser instead of modulated lasers (Underwood et al, 2010). This allows the use of continuous wave lasers outside the tracking volume and very low power modulators (50 µW at 1 GHz, scaling with frequency) versus 16 mW for approximately 300 µW of light from a VCSEL and 45 mW for a 10 GHz driver.…”
Section: O High Speed Readout Applicationsmentioning
confidence: 99%
“…We have been interested in integrated silicon optics and have done radiation tests of Ge doped Si modulator base material to levels of 10 17 electrons. [10] H Fig…”
Section: Modulators Under Studymentioning
confidence: 99%
“…We have been interested in integrated silicon optics and have done radiation tests of Ge doped Si modulator base material to levels of 10 17 electrons. [10] H More recently we have focused on two other paths, commercial silicon integrated optics devices which might be usable either directly or with small modifications, an example of which is shown in Figs. 1 and 2, and InP modulators which are expected to be more radiation-resistant than silicon, due to the band structure of the material, and which are also available commercially and work up to 40 Gb/s.…”
mentioning
confidence: 99%
“…The basic material of the MIT EAM, Si with Ge near one surface, was exposed to large fluxes of 3 MeV electrons at the Argonne Van De Graff [7][8][9]. Fluxes of a few times 10 16 /cm 2 might be expected at the innermost tracking layer of an LHC detector with upgraded beam luminosity over ten years.…”
Section: Radiation Studiesmentioning
confidence: 99%