New Pb-Free Stable Sn–Ge Solid Solution Halide Perovskites Fabricated by Spray Deposition

Kama, Adi; Tirosh, Shay; Itzhak, Anat; Ejgenberg, Michal

doi:10.1021/acsaem.1c04115

Cited by 31 publications

(23 citation statements)

References 44 publications

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“…The presence of GeI 2 in the perovskite crystals would cause oxidation from GeI 2 to GeO 2 , which is a more stable passivation layer formed at the perovskite crystal surface rather than fragile PbO. 30,36–38 With the presence of all these tetra- n -alkyl ammonium cations used in this study, full dissociation of GeI 2 in these perovskite precursors was successfully obtained due to the coordination between Ge 2+ and the quaternary amines. Unfortunately, the low solubility of TEAI (Fig.…”

Section: Resultsmentioning

confidence: 95%

Surfactant effects on electrochemically durable lead halide perovskite electro-catalysts

et al. 2023

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Section: Resultsmentioning

confidence: 95%

Surfactant effects on electrochemically durable lead halide perovskite electro-catalysts

et al. 2023

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“…[ 68 ] Adi kama et al in their investigation showed power output of 0.25 μW cm −2 for their CsGeI3 device. [ 69 ] Another report showed an experimental efficiency of 3.2% for CsGeI 3 . [ 15 ] Thermal evaporation‐deposited thin film of CsGeI 3 perovskite with high crystallinity, uniformity, and good response in the visible region is demonstrated by Zeng et al [ 70 ] Efficiency as high as 7% is shown for the Sn–Ge mixed CsSn 0.5 Ge 0.5 I 3 device with significant stability.…”

Section: Stability Aspect Of Ge‐based Inorganic Perovskitesmentioning

confidence: 99%

Bandgap Assessment of Compositional Variation for Uncovering High‐Efficiency Improved Stable All‐Inorganic Lead‐Free Perovskite Solar Cells

Prabu

Malathi

Kumar

et al. 2023

Physica Status Solidi (a)

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The quest for suitable material technology becomes an imperative aspect of PV energy conversion applications. Pursuing ideal materials or designing efficient PV devices requires a keen understanding of underlying PV action and material properties. These include defect-free, chemically and mechanically stable, semiconductive, and absorption properties, which could be easily tuned, manipulated, and readily fabricated. The candidate for such a futuristic material could be a perovskite solar cell (PSC), which has a dramatically improved performance over the last decade. [4] Recent reports observed a steep rise in efficiency from %3% to %25.5% for Pb-based hybrid perovskites (a combination of MAPbI 3 and FAPbI 3 ). [5][6][7][8] These hybrid compositions of PSC are susceptible to long-term stability issues due to temperature, moisture exposure cycle, lead (Pb)based toxicity, and I-V hysteresis characteristics, which limit or question their practical use. [9][10][11] Therefore, the significant research gap is to find practical solutions to the Pb-toxicity and stability issue while preserving or improving the inherent performance and remarkable photophysical properties. Stability issues in hybrid organic-inorganic perovskite are severe limiting issues, mainly due to hygroscopicity, volatility, and thermal and chemical instability of organic cations. It is likely resolved by replacing the organic part with inorganic-based perovskite. [12] For addressing stability issue, organic cations such as CH 3 NH 3 þ (methylammonium, MA) and (HC(NH 2 ) 2 þ (formamidium, FA) are substituted with inorganic cations such as Cs and Rb. For addressing Pb toxicity issues, Pb is substituted with same group elements Sn and Ge. [13][14][15][16][17][18] The fully inorganic perovskite are continually explored to identify suitable replacements for Pb toxicity and MA stability issues while maintaining perovskite's superior optical properties. The inorganic absorberbased devices of CsPbI 3 have shown efficiency of 20%. [19] These inorganic absorbers perform comparatively with original hybrid organic-inorganic (MAPbI 3 , FAPbI 3 ) perovskites; however, it does not answer the lead presence issue. Sn-replaced Pb perovskites have shown high absorption and optical properties, optimal bandgap, and efficiency around 10% in FASnI 3 devices. This Sn substitution solves the Pb toxicity issues; however, Sn readily goes under oxidation from Sn þ2 to Sn þ4 , which rapidly degrades device performances and further aggravates the stability issues. Literature reports have shown that partial substitution

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“…According to literature reports, solvothermal‐grown CsGeI 3 , a purely Ge‐based absorber, has shown an efficiency of 4.94% and reported similar stability as MAPbI3. [ 34 ] Other studies have shown lower efficiencies, with Krishnamoorthy et al demonstrating an efficiency of 0.11% for CsGeI 3 , [ 35 ] Adi Kama et al reported a power output of 0.25 μW cm −2 for their CsGeI3 device, [ 36 ] and another report showed an experimental efficiency of 3.2% for CsGeI 3 . [ 37 ] Zeng et al demonstrated the deposition of thermal evaporation thin films of CsGeI 3 perovskite with high crystallinity, uniformity, and good response in the visible region.…”

Section: Stability Aspect Of Ge‐based Perovskite Solar Cellsmentioning

confidence: 99%

Simulation of Native Oxide‐Passivated CsSn_0.5Ge_0.5I₃ Highly Stable Lead‐Free Inorganic Perovskite Solar Cell

Livingston¹,

Prabu

Radhika³

et al. 2023

Physica Status Solidi (a)

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The rapid evolution of efficiency from 3% in 2009 to 25% today [1,2] has made perovskite a potential alternative to costly Si and GaAs photovoltaic material. The remarkable optical absorption properties, wide-bandgap tunability, high diffusion length, defects tolerance, and solution-based benign fabrication have made perovskite a significant photovoltaic (PV) material. However, on the other hand, Pb presence and phase stability are concerning challenges associated with perovskite. [3] Replacing Pb with the same group smaller element, Sn is seen in MASnX 3 , FASnX 3 , and inorganic CsSnX 3 . The performance of MASnI3 is 7.1%, [2] and FA-based SnX 3 is about 14.3%; [4] similarly, the CsSnX 3 have crossed 10%. [5] Sn replacement might have solved the Pb toxicity issue but it is still plagued with stability issues. The rapid oxidation of Sn þ2 to Sn þ4 is an unresolved issue in high-efficiency CsSnI 3 perovskites. [6] It is consistently reported in the literature that the Sn readily goes under oxidation from Sn þ2 to Sn þ4 , which rapidly degrades and further aggravates the stability issues of Sn-based perovskite. [6] Group 14 elements of Pb, Sn, Cd, and Ge all form narrow-bandgap perovskite; among these, only Ge fulfils the criteria of Earth abundance and nontoxicity. Some reports in the literature exist about the partial substitution of Ge in Snbased perovskites, such as MASnGeI 3 , CsSnGeI 3 etc. The mixed inorganic perovskite, thus resulting out of Sn-Ge systems, has demonstrated higher stability than Sn alone at the B site in perovskite. [7] Ge, Sn, and Pb have increasing ionic radii and similar electronic configurations with ns 2 lone pair whose activity increases with reducing ion size. The probability of a hole appearing in the valence band is higher in the Sn/Ge-based perovskite than in the Pb-based perovskite. The hybridization of the 5s and 4s bands of Sn and Ge with the 5p state of halide in the valance band causes the generation of holes. [8] Pure Ge-based perovskites such as MAGeI 3 and CsGeI 3 have exhibited remarkably high ionic conductivity and similar optical properties as MAPbI 3 with high absorption and weak reflectance. [9,10] The imaginary part of the dielectric function and absorption coefficient show a blueshift in Ge-based perovskite compared to Pb-based perovskite, implying the strong absorption of the visible region in Ge perovskite. [11] The negative free energy of formation for MAGeI 3 is similar to MAPbI 3 , suggesting similar stability of the two perovskite phases. The order of the stability of Pb-, Sn-, Ge-based perovskite is summarized as MAPbI 3 > MAGeI 3 > MASnI 3 > MAGeCl 3 >MAGeBr 3 by Rossella et al. and [6] Sun et al., [9] where the stability of MAGeI 3 is comparable with MAPbI 3 . Ge is lighter when compared with both Pb and Sn, enabling Ge-based perovskite to have higher power density than later. [7] The stability order for Cs-based perovskite (CsGeI 3 ) is CsSn 0.5 Ge 0.5 I 3 > CsSnI 3. The CsSn x Ge 1-x I 3 perovskite becomes relatively stable due to forming a Ge-rich, 5 nm-...

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New Pb-Free Stable Sn–Ge Solid Solution Halide Perovskites Fabricated by Spray Deposition

Cited by 31 publications

References 44 publications

Surfactant effects on electrochemically durable lead halide perovskite electro-catalysts

Surfactant effects on electrochemically durable lead halide perovskite electro-catalysts

Bandgap Assessment of Compositional Variation for Uncovering High‐Efficiency Improved Stable All‐Inorganic Lead‐Free Perovskite Solar Cells

Simulation of Native Oxide‐Passivated CsSn_0.5Ge_0.5I₃ Highly Stable Lead‐Free Inorganic Perovskite Solar Cell

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New Pb-Free Stable Sn–Ge Solid Solution Halide Perovskites Fabricated by Spray Deposition

Cited by 31 publications

References 44 publications

Surfactant effects on electrochemically durable lead halide perovskite electro-catalysts

Surfactant effects on electrochemically durable lead halide perovskite electro-catalysts

Bandgap Assessment of Compositional Variation for Uncovering High‐Efficiency Improved Stable All‐Inorganic Lead‐Free Perovskite Solar Cells

Simulation of Native Oxide‐Passivated CsSn0.5Ge0.5I3 Highly Stable Lead‐Free Inorganic Perovskite Solar Cell

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Simulation of Native Oxide‐Passivated CsSn_0.5Ge_0.5I₃ Highly Stable Lead‐Free Inorganic Perovskite Solar Cell