New phenomena for the Lifetime Prediction of TANOS-based Charge Trap NAND Flash Memory

Kim, Juhyung; Kang, Chang Seok; Chang, Sung-Il; Kim, Jong Yeon; Jeong, Youchul; Park, Chan; Kang, Jingoo; Kim, Sang-Hoon; Hwang, Sun-Kyu; Choe, Byeong-In; Park, Jintaek; Chung, Ju-Hyuck; Park, Young-Woo; Choi, Jaehyuk; Chung, Chilhee

doi:10.1109/drc.2010.5551854

Cited by 9 publications

(4 citation statements)

References 2 publications

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“…However, it has been continuously reported that the Arrhenius plot shows not a straight line but shows the multiple activation energies [5,6]. Several experimental data showing the non-Arrhenius relation is summarized in Fig.…”

Section: Introductionmentioning

confidence: 95%

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Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory

Park

Choi

Jun

et al. 2015

Solid-State Electronics

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Section: Introductionmentioning

confidence: 95%

“…1(a) for FG cells and Fig. 1(b) for CT memory cells [5][6][7][8][9][10][11]. This characteristics give rise to the problem that the expected lifetime varies according to the choice of the activation energy depending on the stress temperatures.…”

Section: Introductionmentioning

confidence: 99%

Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory

Park

Choi

Jun

et al. 2015

Solid-State Electronics

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“…The activation energy, extracted from extrapolating of the Arrhenius plot, is the widely used prediction method for the data lifetime [4]. However, the activation energy does not show a single constant in CTF cells [5][6][7] and it is different in its essential characteristic from the floating gate flash memory cells [8]. This means that the major charge loss mechanism is different between the CTF and the floating gate flash memory cells.…”

mentioning

confidence: 99%

Modelling by using multiphonon emission theory of data retention characteristics in charge trapping flash memory

Son

Kang

2016

Electron. lett.

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Data retention characteristics are investigated in charge trapping flash memory. The physical root cause of the non-Arrhenius behaviour, which is the general retention characteristic in charge trap flash memories, is numerical modelling that the charge loss mechanism is associated with the trap energy level in the charge storage area. For expression of the charge loss in the relatively shallow traps, multiphonon emission model is adopted. Finally, the ratio of the relatively shallow traps to middle and deep level traps is extracted in a sample data.

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“…Fig. 1(a) and (b) show the cross sectional SEM image of Si-nanowire stacked array cells having GAA structure [9] and the cross sectional profiles with bit-line (BL) and word-line (WL) directions for TANOS based CTF cells [10], respectively. I-V measurement of the devices was carried out with 4155C (Agilent) for comparing SSs.…”

Section: Introductionmentioning

confidence: 99%

A Subthreshold Slope and Low-frequency Noise Characteristics in Charge Trap Flash Memories with Gate-All-Around and Planar Structure

Lee¹,

Joe²,

Yun³

et al. 2012

JSTS:Journal of Semiconductor Technology and Science

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Abstract-The causes of showing different subthreshold slopes (SS) in programmed and erased states for two different charge trap flash (CTF) memory devices, SONOS type flash memory with gate-all-around (GAA) structure and TANOS type NAND flash memory with planar structure were investigated. To analyze the difference in SSs, TCAD simulation and low-frequency noise (LFN) measurement were fulfilled. The device simulation was performed to compare SSs considering the gate electric field effect to the channel and to check the localized trapped charge distribution effect in nitride layer while the comparison of noise power spectrum was carried out to inspect the generation of interface traps (N IT ). When each cell in the measured two memory devices is erased, the normalized LFN power is increased by one order of magnitude, which is attributed to the generation of N IT originated by the movement of hydrogen species (h * ) from the interface. As a result, the SS is degraded for the GAA SONOS memory device when erased where the N IT generation is a prominent factor. However, the TANOS memory cell is relatively immune to the SS degradation effect induced by the generated N IT .

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New phenomena for the Lifetime Prediction of TANOS-based Charge Trap NAND Flash Memory

Cited by 9 publications

References 2 publications

Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory

Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory

Modelling by using multiphonon emission theory of data retention characteristics in charge trapping flash memory

A Subthreshold Slope and Low-frequency Noise Characteristics in Charge Trap Flash Memories with Gate-All-Around and Planar Structure

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