New phenomena in homoepitaxial growth of metals

Poelsema, Bene; Kunkel, Ralf; Nagel, N.; Becker, Andreas F.; Rosenfeld, Georg; Verheij, Laurens K.; Comşa, George

doi:10.1007/bf00348149

Cited by 109 publications

(37 citation statements)

References 23 publications

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“…In the light of our observations, it seems that a high step-edge barrier is in general a common feature of the (111) face of fcc noble metals, as both Cu(lll) and Ag(lll) [6,12,17--19] grow three-dimensionally for all temperatures below step flow, and Pt(lll) grows in the same mode for a wide temperature range [8][9][10][11]. The 2D growth of Pt(111) at higher temperatures seems to be an exception which can be traced back to the reconstruction of the Pt surface.…”

Section: Conventional Growth Of Cu/cu( L L L ) and Annealingmentioning

confidence: 68%

“…It has long been reported in the literature that the introduction of foreign substances to an epitaxial system can affect the growth mode in heteroas well as homo-epitaxy [ 19,[51][52][53][54][55][56][57]. For example, Sb changes the growth mode in the Ag/Ag(111) system from three-to two-dimensional [ 19].…”

Section: Oxygen Mediated Growthmentioning

confidence: 99%

“…One of the substances which is known to influence growth in noble-metal and other systems is oxygen [55][56][57]. Experiments on the growth of Pt on Pt(lll) [55,56] show that growth in that system is improved when oxygen is used as a surfactant.…”

Section: Oxygen Mediated Growthmentioning

confidence: 99%

“…Experiments on the growth of Pt on Pt(lll) [55,56] show that growth in that system is improved when oxygen is used as a surfactant. It was also demonstrated that in the Pt/Pt(111) case oxygen floats up to the highest uncovered layer as deposition is continued.…”

Section: Oxygen Mediated Growthmentioning

confidence: 99%

“…For homoepitaxy on Pt(111), three growth regimes were observed at temperatures below step-flow [8][9][10][11][12]: at intermediate temperatures (340-45G K), several layers grow simultaneously and the system grows three-dimensionally rough (3D growth). This mode of growth was explained by the existence of a barrier (step-edge barrier [13,14 j), hindering interlayer mass transport.…”

Section: Introductionmentioning

confidence: 99%

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Conventional and manipulated growth of Cu/Cu(111)

et al. 1996

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Molecular beam epitaxy of Cu on Cu( 111 ) was studied using thermal energy He scattering, in the temperature range between 100 and 450 K. Three-dimensional growth was observed in the whole temperature range. To determine the onset of various diffusion processes, submonolayer films formed by deposition at low temperature were annealed. Annealing proceeds in two steps. The first step is interpreted as a change in island shape, the second as Ostwald-ripening. A comparison with homoepitaxy on Pt( 111 ) and Ag( 111 ) is made. Growth manipulation was carried out by artificially increasing the island number density via intervention in the nucleation stage of each layer. The procedures applied were temperature reduction during nucleation as well as pulsed ion bombardment. These techniques enabled the convenient growth of good quality films consisting of a large number of monolayers. Finally, the use of oxygen as a suffactant modifying the growth mode was investigated. Under some growth conditions, pre-exposure of the surface to oxygen was found to induce weak He-intensity oscillations during deposition. The quality of the films grown in tiffs way was, however, low.

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Section: Conventional Growth Of Cu/cu( L L L ) and Annealingmentioning

confidence: 68%

Section: Oxygen Mediated Growthmentioning

confidence: 99%

Section: Oxygen Mediated Growthmentioning

confidence: 99%

Section: Oxygen Mediated Growthmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Conventional and manipulated growth of Cu/Cu(111)

et al. 1996

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Epitaxial Growth of Thin Films

Brune

2014

Surface and Interface Science

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This chapter gives an introduction to the epitaxial growth of thin films on solid substrates. The term epitaxy refers to the growth of a crystalline layer on (epi) the surface of a crystalline substrate, where the crystallographic orientation of the substrate surface imposes a crystalline order (taxis) onto the thin film. This implies that film elements can be grown, up to a certain thickness, in crystal structures differing from their bulk. If film and substrate have the same crystal lattices, but different lattice constants, the film will be under strain, that is, it will have a slightly different lattice constant than in its own bulk. Both effects, together with the electronic hybridization at the interface, lead to novel properties.One distinguishes homo-and heteroexpitaxy, where the former refers to the growth on one element on a crystal surface of its own and the latter refers to the more general case, where film and substrate materials are different. Note that the first distinguishes itself from crystal growth, as we will see in more detail later.We start this chapter by giving examples from technology, illustrating where thin epitaxial films are used and outlining potential applications that become reality once we are able to grow the respective thin film sequences. We then contrast thin film and crystal growth, respectively, with kinetics and thermodynamics of growth. We introduce the deposition techniques used in epitaxial thin film growth and then discuss the classical thermodynamic approach, which led to the definition of the growth modes. These modes refer to the morphology taken on by a system grown close to thermodynamic equilibrium. Often films are grown far away from equilibrium and their morphology is determined by kinetics, that is, it is the result of the microscopic path taken by the system during growth. This path is determined by the hierarchy of rates of the single atom, cluster or molecular precursor displacements as compared to the deposition rate. Owing to the importance of kinetics, we focus in the rest of the chapter on the kinetic description of growth. In order to simplify the topic, we start with coverages below one atomic layer that is referred to as a monolayer. The first submonolayer part will be on nucleation, followed by a discussion of island shapes that, very much like snowflakes, tell us about the elementary processes that took place during their formation. We then discuss island coarsening, either by evaporation of atoms from their edges, referred to as the Ostwald ripening, or by the diffusion and subsequent coalescence of entire islands, referred to as the

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Microscopic Aspects of Thin Metal Film Epitaxial Growth on Metallic Substrates

Günther

Kopatzki

et al. 1993

Ber Bunsenges Phys Chem

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Crystal Growth I Metals I Nonequilibrium Phenomena I Nucleation I SurfacesMicroscopic processes in epitaxial growth of thin metal films on metal substrates are discussed in the light of recent scanning tunneling microscopy data. Details on the nature and role of different atomic processes, though too fast for direct observation, can be inferred from the characteristic development of the film morphology with increasing coverages and its modification upon varying the deposition rate and temperature. It is shown that for deposition at room temperature or moderately increased temperatures film growth and the resulting film morphology are dominated by kinetic effects, and that film growth proceeds via nucleation and growth of 2D islands. -At room temperature, where adatoms are sufficiently mobile to allow efficient intralayer mass transport, film growth begins by nucleation of supercritical clusters in a supersaturated 2D gas of mobile metal adatoms. These clusters can grow into 2D islands. The correlation between adatom mobility, substrate temperature and deposition rate on the one hand and island density on the other are demonstrated. The shape of the growing islands can vary widely, from dendritic to compact island forms. The different shapes are shown to result from kinetic limitations, specifically from a limited adatom mobility along island edges. -For kinetically controlled film growth in the multilayer regime the film morphology is determined by the amount of interlayer mass transport from higher to lower layer levels. 2D layer growth prevails for practically unhindered interlayer mass transport, while multilayer or 3D growth dominates where mass transport is strongly hindered or even absent. Different processes and kinetic effects determining this interlayer transport are discussed, in particular the effect of modifications in the adatom potential at island or step edges. Only for deposition at or annealing to higher temperatures the film morphologies resemble those expected from the thermodynamically controlled growth modes. In agreement with expectations layer-by-layer growth is found for homoepitaxial growth, layer-plus island growth with one or two layers critical thickness, respectively, for the heteroepitaxial growth systems investigated.

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New phenomena in homoepitaxial growth of metals

Cited by 109 publications

References 23 publications

Conventional and manipulated growth of Cu/Cu(111)

Conventional and manipulated growth of Cu/Cu(111)

Epitaxial Growth of Thin Films

Microscopic Aspects of Thin Metal Film Epitaxial Growth on Metallic Substrates

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