2011
DOI: 10.1016/j.jallcom.2011.06.029
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New process for synthesis of nickel oxide thin films and their characterization

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Cited by 42 publications
(27 citation statements)
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“…The direct optical band gaps were found to be 3.97, 3.95, 3.90 and 3.88 eV for samples B0, B1, B2 and B3, respectively. The band gap values obtained in this investigation closely match with the values reported in the literature [11,13,15]. In addition, the band gap value decreases with increasing film thickness due to increase in grain size.…”
Section: Rbs Analysissupporting
confidence: 89%
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“…The direct optical band gaps were found to be 3.97, 3.95, 3.90 and 3.88 eV for samples B0, B1, B2 and B3, respectively. The band gap values obtained in this investigation closely match with the values reported in the literature [11,13,15]. In addition, the band gap value decreases with increasing film thickness due to increase in grain size.…”
Section: Rbs Analysissupporting
confidence: 89%
“…On the other hand, transition metal oxides semiconducting materials such as MoO 3 , WO 3 and NiO have great potential application in microelectronics and optoelectronics [4][5][6][7][8][9][10][11][12][13][14][15]. Among them, nickel oxide (NiO) has specific properties and diverse applications.…”
Section: Introductionmentioning
confidence: 99%
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“…NiO is an important antiferromagnetic p-type of semiconductor and is a promising candidature for many applications such as lithium ion batteries, solar cells, antiferromagnetic layer, electrochemical capacitors, chemical sensors, and electrochromic coatings [1]. Stoichiometric NiO at R.T is an insulator with a resistivity of 10 13 Ω cm.The electrical conductivity of NiO can be manipulated by changing the concentration of Ni ion during doping [2].…”
Section: Introductionmentioning
confidence: 99%