2013
DOI: 10.1016/j.solmat.2013.02.032
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New progress in the fabrication of n–i–p micromorph solar cells for opaque substrates

Abstract: a b s t r a c tIn this paper, we investigate tandem amorphous/microcrystalline silicon solar cells with asymmetric intermediate reflectors grown in the n-i-p substrate configuration. We compare different types of substrates with respect to their light-trapping properties as well as their influence on the growth of single-junction microcrystalline cells. Our most promising back reflector combines a textured zinc oxide film grown by low-pressure chemical vapor deposition, a silver film for reflection, and a zinc… Show more

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Cited by 29 publications
(19 citation statements)
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“…1c. We have attempted to form series connection of these two optimized cells with minimized series resistance at the junction, which is essential to obtain the best-performing tandem devices 3,[9][10][11][12][13][14] . Typically in thin-film tandem cells, ultrathin doped layers are employed to form tunnel junctions between the sub-cells with extremely high doping 2,13,14 .…”
Section: Resultsmentioning
confidence: 99%
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“…1c. We have attempted to form series connection of these two optimized cells with minimized series resistance at the junction, which is essential to obtain the best-performing tandem devices 3,[9][10][11][12][13][14] . Typically in thin-film tandem cells, ultrathin doped layers are employed to form tunnel junctions between the sub-cells with extremely high doping 2,13,14 .…”
Section: Resultsmentioning
confidence: 99%
“…We have attempted to form series connection of these two optimized cells with minimized series resistance at the junction, which is essential to obtain the best-performing tandem devices 3,[9][10][11][12][13][14] . Typically in thin-film tandem cells, ultrathin doped layers are employed to form tunnel junctions between the sub-cells with extremely high doping 2,13,14 . Although ultrathin heavily n-doped a-Si:H film can be obtained, hole collection layer (HCL) for polymer cells such as MoO 3 sulfonate (PEDOT:PSS) can be neither ultrathin nor highly doped [20][21][22] .…”
Section: Resultsmentioning
confidence: 99%
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“…The thickness of the films varied between 0.65 and 1.2 μm. a-Si:H layers were deposited in the n-i-p configuration by plasma-enhanced chemical vapor deposition [19] while the front electrode was made of either the dense or dense/nanopillar film stacks as showed below (cfr. figure 5).…”
Section: Sample Fabricationmentioning
confidence: 99%
“…In the standard cell process, the metal impurities can be reduced and even totally 454 deactivated when the wafers are submitted to the diffusion process, due to gettering effects 455 (explained in Sec. 2.3.3.).…”
mentioning
confidence: 99%