New Results of Degradation Effects in SiO2 Films

Abstract

The generation of interface trap clusters and conducting microchannels at Fowler‐Nordheim injection stress as a special effect of degradation of thin SiO2 films is investigated. The effect starts at a threshold field strength and tends to saturate. Threshold and saturation values depend on technological influences such as regime of thermal oxidation and microroughness of the substrate surfaces. From results obtained at both polarities different mechanisms of stress action may be supposed.