New results using membrane-supported circuits: a Ka-band power amplifier and survivability testing

Weller, T.; Katehi, L.P.B.; Herman, Martin I.; Wamhof, P.D.; Lee, K.; Kolawa, E.; Tai, Beverly H.

doi:10.1109/22.536614

Cited by 7 publications

(2 citation statements)

References 5 publications

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“…To perform accurate Q measurements when the values are very high, a very thorough calibration and accurate deembedding of pads parasitics is needed [19]. Herein, several inductors of the same geometry were measured to ensure repeatability in the measurements.…”

Section: Micromachined 3-d Inductorsmentioning

confidence: 99%

Heterogeneous Wafer-Scale Circuit Architectures

et al. 2007

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Section: Micromachined 3-d Inductorsmentioning

confidence: 99%

Heterogeneous Wafer-Scale Circuit Architectures

et al. 2007

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“…Micromachined varactors that exhibit a wide tuning range and are part of a low-noise voltage-controlled oscillator [6]- [8], as well as -and -band single-pole double-throw switching circuits [9] have also been demonstrated. A substantial amount of progress has also been reported in bulk micromachined passive and active microwave/millimeter-wave structures including planar transmission lines [10]- [12], filters [13], couplers [14], resonators [15], antennas [16], and other components.…”

mentioning

confidence: 99%

Reconfigurable double-stub tuners using MEMS switches for intelligent RF front-ends

Papapolymerou

Lange²,

Goldsmith³

et al. 2003

IEEE Trans. Microwave Theory Techn.

108

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This paper presents novel planar dynamically reconfigurable double-stub tuners that utilize electrostatically activated microelectromechanical system (MEMS) switches. The tuners operate in the 10-20-GHz frequency range and have stubs that consist of a digital capacitor bank. Each bank has a predetermined number of capacitors that can be selected through the activation of appropriate MEMS switches. The value and number of capacitors is dictated by the range of loads that needs to be matched. Simulated and measured results from several designs are presented. A 4 bit 4 bit tuner that can match loads with 1 5 Re 109 and 107 Im 48 at 20 GHz equivalent to three quadrants of the Smith chart and loads with 3 Re 94 and 260 Im 91 at 10 GHz is demonstrated for the first time, as well as other designs. The demonstrated tuners provide real-time reconfiguration and matching for RF loads that change values during system operation. Applications include the development of several novel highly integrated microwave/millimeter-wave circuits such as ultra-wide-band high output power and increased power-added-efficiency amplifiers, ultra-wide-band multipliers, and very broad-band antenna arrays. It is expected that these circuits will be part of future low-cost and low-power intelligent RF front-end microsystems and systems-on-a-chip. Index Terms-Intelligent RF front-ends, reconfigurable tuner, RF microelectromechanical system (MEMS) switches. I. INTRODUCTION M ICROWAVE and millimeter-wave technology that offers high-performance, low cost, small size, low power, and wide tunability is essential for today's cost-driven commercial and military industries. In order to meet the above requirements, the research community over the last ten years has been focusing on entire system-on-a-chip solutions, where different components (e.g., passive, active) are integrated on the same substrate. To enhance the performance of planar microwave circuits and address associated problems, researchers have been using micromachining techniques and microelectromechanical system (MEMS) devices [1].

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Fabrication of Planar Transmission Lines

2021

Introduction to Modern Planar Transmission Lines

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New results using membrane-supported circuits: a Ka-band power amplifier and survivability testing

Cited by 7 publications

References 5 publications

Heterogeneous Wafer-Scale Circuit Architectures

Heterogeneous Wafer-Scale Circuit Architectures

Reconfigurable double-stub tuners using MEMS switches for intelligent RF front-ends

Fabrication of Planar Transmission Lines

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