2020
DOI: 10.1109/tns.2019.2953995
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New SEU Modeling Method for Calibrating Target System to Multiple Radiation Particles

Abstract: This article proposes a method using electron and proton Single Event Upset sensitivities of a device to deduce all simulation parameters related to an RPP approach. It is shown that for 45-nm double data rate (DDR) memory, the RPP approach is still relevant and the crossing of proton and electron data makes it possible to constrain and properly define the associated parameters. Heavy ion prediction is also presented.

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Cited by 4 publications
(6 citation statements)
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“…An intermediate region is also identifiable after the ionization contribution and up to 3-4 MeV. Similarly to what has been already shown for other devices [9], [10], [15], this SEU region is mainly dominated by the elastic Coulomb process. Beyond 20 MeV, proton-induced SEU cross sections are roughly constant (near to 6 ⋅ 10 −15 cm²/bit).…”
Section: B Proton-induced Seusupporting
confidence: 80%
“…An intermediate region is also identifiable after the ionization contribution and up to 3-4 MeV. Similarly to what has been already shown for other devices [9], [10], [15], this SEU region is mainly dominated by the elastic Coulomb process. Beyond 20 MeV, proton-induced SEU cross sections are roughly constant (near to 6 ⋅ 10 −15 cm²/bit).…”
Section: B Proton-induced Seusupporting
confidence: 80%
“…The MicroElec project, which is a Geant4 extension for incident electrons, protons and heavy ions in silicon, aims to implement lower energy ionization models in Geant4 to improve track structures simulation. MicroElec has been used for microdosimetry and Single-Event Effects applications [8,9] and is based on the already existing framework of the Geant4-DNA extension [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…For instance, PENELOPE [25] is valid down to 250 eV. Some other models based on the dielectric function theory have also been developed [26]- [33], which allow extending the validity domain down to a few eV. These developments are however adapted on a case-by-case basis for each material and have only been applied in the literature to a very limited number of materials [26]- [33].…”
Section: A Overviewmentioning
confidence: 99%
“…Some other models based on the dielectric function theory have also been developed [26]- [33], which allow extending the validity domain down to a few eV. These developments are however adapted on a case-by-case basis for each material and have only been applied in the literature to a very limited number of materials [26]- [33]. Up to now, it was not a real issue for space applications, as the environment models such as AE8 and AP8 [21] presented cutoff energies far above the low energy limit of the transport methods.…”
Section: A Overviewmentioning
confidence: 99%
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