2021
DOI: 10.1109/led.2021.3072371
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New Strained Silicon-On-Insulator Lateral MOSFET With Ultralow ON-Resistance by Si1-xGexP-Top Layer and Trench Gate

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Cited by 5 publications
(2 citation statements)
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“…The laterally diffused metal oxide semiconductor (LDMOS) devices play increasingly implant roles in power management integrated circuits (PMICs). The PMICs fabricated with the bipolar-CMOS-DMOS (BCD) process own the advantages of highpower density, high speed, and easy integration [1,2]. Many researches have been published about LDMOS performance enhancement [3,4].…”
Section: Introductionmentioning
confidence: 99%
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“…The laterally diffused metal oxide semiconductor (LDMOS) devices play increasingly implant roles in power management integrated circuits (PMICs). The PMICs fabricated with the bipolar-CMOS-DMOS (BCD) process own the advantages of highpower density, high speed, and easy integration [1,2]. Many researches have been published about LDMOS performance enhancement [3,4].…”
Section: Introductionmentioning
confidence: 99%
“…There are also many research works about novel structures, including surrounded stress dielectric layer LDMOS [2], folded accumulation LDMOS [5], optimized high-temperature oxide field plate, and the decoupled plasma nitridation LDMOS [6], H-shape shallow-trench isolation (STI) field plate LDMOS [7], or even silicon-on-insulator LDMOS [8], and high breakdown voltage devices with new material Ga 2 O 3 [9]. These papers provided certain innovative device structures with encouraged R on,sp or BV ds,max performance by simulation results or small amounts of electrical results.…”
Section: Introductionmentioning
confidence: 99%