2015
DOI: 10.1021/acs.chemmater.5b01170
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New Strategy for the Growth of Complex Heterostructures Based on Different 2D Materials

Abstract: Tungsten disulfide (WS2) monolayers have been synthesized under ultra high vacuum (UHV) conditions on quasi-free-standing hexagonal boron nitride (h-BN) and gold deposited on Ni(111). We find that the synthesis temperature control can be used to tune the WS2 structure. As documented by in situ core level and valence band photoemission and by ex situ Raman spectroscopy, the partially disordered WS2 layer obtained at room temperature transforms to the 2H-WS2 phase at about 400°C. Low energy electron diffraction … Show more

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Cited by 33 publications
(26 citation statements)
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“…Analysing WS 2 grown using H 2 WO 4 + NaCl, the W 4f 5/2 and W 4f 7/2 core levels (Fig. 5a ) present peak position characteristic of W 4+ in WS 2 43 , 44 (32.7 and 34.8 eV respectively) and the narrowest achievable FWHM (1 eV) (Fig. 5a ), using the Mg Kα as X-ray source.…”
Section: Resultsmentioning
confidence: 99%
“…Analysing WS 2 grown using H 2 WO 4 + NaCl, the W 4f 5/2 and W 4f 7/2 core levels (Fig. 5a ) present peak position characteristic of W 4+ in WS 2 43 , 44 (32.7 and 34.8 eV respectively) and the narrowest achievable FWHM (1 eV) (Fig. 5a ), using the Mg Kα as X-ray source.…”
Section: Resultsmentioning
confidence: 99%
“…It is an insulator with a band gap of more than 5 eV [ 63 ] and therefore represents a fundamental component of future 2D electronic devices. Hexagonal boron nitride single layers have been grown on epitaxial substrates and intercalated to obtain a quasi-free-standing layer and this change has been visualized by conventional ARPES [ 64 , 65 ]. It has also been mechanically exfoliated and analyzed by nano-ARPES [ 66 ], exactly as has been done previously with graphene.…”
Section: Spatially Resolved Arpes For 2d Materialsmentioning
confidence: 99%
“…In their recent publication, they triggered the extended range of various applications for such heterostructures apart from demonstrating the photovoltaic effect . The Van der Waals epitaxial fabrication process, direct growth, and the large‐scale CVD growth process are used to realize thin van der Waals heterostructures like graphene/h‐BN, MoS 2 /graphene, MoS 2 /h‐BN, WS 2 /h‐BN, WS 2 /MoS 2 , and MoS 2 /WSe 2 heterojunctions…”
Section: D/2d Heterojunction Solar Cellsmentioning
confidence: 99%