New Structure Model for the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">G</mml:mi><mml:mi mathvariant="normal">a</mml:mi><mml:mi mathvariant="normal">A</mml:mi><mml:mi mathvariant="normal">s</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mn>001</mml:mn><mml:mo stretchy="false">)</mml:mo><mml:mtext mathvariant="normal">−</mml:mtext><mml:mi>c</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mn>4</mml:mn><mml:mo>×</mml:mo><mml:mn>4</mml:mn><mml:mo stre

Ohtake, Akihiro; Nakamura, Jun; Tsukamoto, Shiro; Koguchi, Nobuyuki; Natori, Akiko

doi:10.1103/physrevlett.89.206102

Cited by 110 publications

(83 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, it should be noted that further 0.5 ML of In adsorption necessary to realize (2×4)α2 on the (4×3) is similar to GaAs(001), where 0.5 ML of Ga changes c(4×4) with Ga-As dimers to (2×4) [14,15]. Ohtake et al found the GaAs(001)-c(4×4) consisting of Ga-As dimers that has been confirmed by ab initio calculations, RHEED, and STM observations [16]. They pointed out that their large-scale STM images from the c(4×4) surface show a conventional brickwork pattern of bright rectangular blocks.…”

Section: Fig 4 Structural Change Sequence Of the Inas(001)-(4×3)mentioning

confidence: 63%

Ab Initio-Based Approach to Structural Change in InAs (001)-(2×3) Wetting Layer Surfaces during MBE Growth

Akiyama

Nakamura

2015

e-J. Surf. Sci. Nanotech.

View full text Add to dashboard Cite

The structural change in InAs(001)-(2×3) wetting layer surfaces grown on GaAs is investigated using ab initiobased approach incorporating temperature T and beam equivalent pressure p. Our calculated results reveal that the (2×3) surface fully covered by As dimers is unstable while the (n×3) surfaces (n =4, 6, and 8) with (n − 1) dimers including In-As and one missing dimer is more stable at the conventional molecular beam epitaxial (MBE) growth conditions such as T = 703 K under pIn = 1.0×10−7 Torr and pAs 4 = 7.5×10 −7 Torr. On the (n×3) surfaces, In atoms are incorporated through In-As dimer formation with As desorption. The resultant (4×3) surface consists of three In-As dimers and one missing dimer. The (6×3) surface has three In-As dimers, two As dimers, and one missing dimer. Only one In-As dimer emerges with six As dimers and one missing dimer on the (8×3) surface. The missing dimer region becomes favorable site for further In adsorption. Moreover, the (8×3) can easily change to the (4×3) with In adsorption and subsequent As dimer desorption on the initial (8×3). The existence ratio R for the (4×3) and (6×3) units is respectively estimated to be R = 0.70 and 0.30 satisfying 0.375 ML desorption of As on the (2×3) to form the (2×4)α2. This is consistent with experimental results. Consequently, the (n×3) surfaces including In-As dimers appear during MBE growth instead of the (2×3) surface with As-dimers.

show abstract

Section: Fig 4 Structural Change Sequence Of the Inas(001)-(4×3)mentioning

confidence: 63%

Ab Initio-Based Approach to Structural Change in InAs (001)-(2×3) Wetting Layer Surfaces during MBE Growth

Akiyama

Nakamura

2015

e-J. Surf. Sci. Nanotech.

View full text Add to dashboard Cite

show abstract

“…Conceivable for example would be an exchange of one of the As atom in the As-As dimer by a N-atom. Such mixed dimer structures have been observed on III-P(001) [6] or InGaP(001) surfaces [7] as well as on GaAs(001) c(4 ¥ 4) surfaces [9]. Upon further annealing of the GaAsN(001) c(4 ¥ 4) to 470 °C the RAS spectra changed gradually to a new line shape.…”

Section: Methodsmentioning

confidence: 88%

MOVPE growth and surface reconstructions of GaAsN(001) surfaces

Ehlert¹,

Poser²,

Esser³

et al. 2005

Physica Status Solidi (b)

View full text Add to dashboard Cite

In this study we present comparative in-situ Reflectance Anisotropy Spectroscopy (RAS) studies of GaAs 1 x -N x under MOVPE conditions and in UHV for samples with a nitrogen content of up to 5%. The samples were grown by MOVPE and after growth capped with an amorphous As-layer, transferred to UHV and decapped by annealing. Three different surface reconstructions (c(4 ¥ 4), (2 ¥ 4), (4 ¥ 2)) were obtained after decapping and prolonged annealing at different temperatures. These reconstructions, though similar to those found on the GaAs(001) surface show clear nitrogen-related features in the RAS line shape.

show abstract

“…Here, we define the 1 ML of Ga as the amount of Ga needed to obtain 1 ML of GaAs in the presence of As. At the initial stage, deposited Ga atoms are likely to be incorporated into the arsenic terminated surface to form GaAs, because 1.75 ML of excess As atoms are known to exist on the As-stabilized GaAs(001)-c(4 × 4) surface [22]. Therefore, the remaining 2 ML of Ga atoms give rise to the formation of the droplets.…”

Section: Introductionmentioning

confidence: 99%

Growth of GaSb dots on GaAs(100) by droplet epitaxy

Kawazu¹,

Mano

Noda

et al. 2009

Physica Status Solidi (b)

View full text Add to dashboard Cite

We have studied the growth of GaSb quantum dots (QDs) on GaAs by droplet epitaxy. First, Ga droplets are formed on GaAs and then exposed to Sb flux to be clad by large granular crystals of Sb; by annealing this wafer at 380 °C, GaSb QDs are successfully formed. By atomic force microscopic studies, it is found that GaSb QDs thus formed are on average 9.2 nm in height, 74 nm in diameter, and 7.8 × 109 cm2 in density. Photoluminescence properties of these QDs have been also investigated. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

New Structure Model for theGaAs(001)−c(4×4

Cited by 110 publications

References 30 publications

<i>Ab Initio</i>-Based Approach to Structural Change in InAs (001)-(2×3) Wetting Layer Surfaces during MBE Growth<i><sup> </sup></i>

<i>Ab Initio</i>-Based Approach to Structural Change in InAs (001)-(2×3) Wetting Layer Surfaces during MBE Growth<i><sup> </sup></i>

MOVPE growth and surface reconstructions of GaAsN(001) surfaces

Growth of GaSb dots on GaAs(100) by droplet epitaxy

Contact Info

Product

Resources

About

New Structure Model for theGaAs(001)−c(4×4

Cited by 110 publications

References 30 publications

<i>Ab Initio</i>-Based Approach to Structural Change in InAs (001)-(2&times;3) Wetting Layer Surfaces during MBE Growth<i><sup> </sup></i>

<i>Ab Initio</i>-Based Approach to Structural Change in InAs (001)-(2&times;3) Wetting Layer Surfaces during MBE Growth<i><sup> </sup></i>

MOVPE growth and surface reconstructions of GaAsN(001) surfaces

Growth of GaSb dots on GaAs(100) by droplet epitaxy

Contact Info

Product

Resources

About

<i>Ab Initio</i>-Based Approach to Structural Change in InAs (001)-(2×3) Wetting Layer Surfaces during MBE Growth<i><sup> </sup></i>

<i>Ab Initio</i>-Based Approach to Structural Change in InAs (001)-(2×3) Wetting Layer Surfaces during MBE Growth<i><sup> </sup></i>